17715473. CAPACITOR, MEMORY DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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CAPACITOR, MEMORY DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR
Organization Name
Inventor(s)
CAPACITOR, MEMORY DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17715473 titled 'CAPACITOR, MEMORY DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR
Simplified Explanation
The abstract describes a patent application for a capacitor design that includes a lower electrode layer, a dielectric layer, and an upper electrode layer. The lower electrode layer consists of a first conductive layer and a second conductive layer doped with an impurity. The dielectric layer is made of a rutile-phase oxide.
- The capacitor design includes a lower electrode layer with two conductive layers.
- The second conductive layer is doped with an impurity, specifically SnO.
- The dielectric layer is made of a rutile-phase oxide material.
- An upper electrode layer is placed on top of the dielectric layer.
Potential applications of this technology:
- Capacitors are widely used in electronic devices, so this innovation can be applied in various electronic applications.
- The specific materials used in this design may have unique properties that make it suitable for specific applications, such as high-frequency circuits or energy storage systems.
Problems solved by this technology:
- The use of a rutile-phase oxide as the dielectric layer may provide improved performance and stability compared to other dielectric materials.
- The doping of the second conductive layer with an impurity may enhance the electrical properties of the capacitor.
Benefits of this technology:
- The capacitor design may offer improved performance, such as higher capacitance, lower leakage current, or better voltage stability.
- The use of specific materials and doping techniques may enable the capacitor to meet the requirements of specific applications, such as high-temperature environments or high-frequency circuits.
Original Abstract Submitted
A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnOdoped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.
