17714202. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Juik Lee of Anyang-si (KR)

Jong-Min Lee of Hwaseong-si (KR)

Jimin Choi of Seoul (KR)

Yeonjin Lee of Suwon-si (KR)

Jeon Il Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17714202 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a semiconductor device that includes a substrate with two penetrating structures, one larger than the other, on opposite sides of the substrate.

  • The semiconductor device has a substrate with two penetrating structures.
  • The first penetrating structure is larger than the second one.
  • The two penetrating structures are spaced apart from each other.
  • The sizes of the penetrating structures are viewed from the first side of the substrate.

Potential applications of this technology:

  • Integrated circuits
  • Microprocessors
  • Memory devices
  • Power electronics

Problems solved by this technology:

  • Improved performance and functionality of semiconductor devices
  • Enhanced heat dissipation
  • Increased power handling capabilities

Benefits of this technology:

  • Higher efficiency and reliability of semiconductor devices
  • Better thermal management
  • Increased power density
  • Improved overall performance and functionality


Original Abstract Submitted

A semiconductor device includes a substrate including a first side and a second side opposite to each other, a first penetrating structure that penetrates the substrate, and a second penetrating structure that penetrates the substrate, the second penetrating structure being spaced apart from the first penetrating structure, and an area of the first penetrating structure being more than twice an area of the second penetrating structure, as viewed from the first side of the substrate.