17708852. DUAL SIDE SEAL RINGS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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DUAL SIDE SEAL RINGS

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chun Yu Chen of Hsinchu (TW)

Yen Lian Lai of Hsinchu (TW)

DUAL SIDE SEAL RINGS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17708852 titled 'DUAL SIDE SEAL RINGS

Simplified Explanation

The abstract describes a semiconductor structure with dual side seal rings. It includes a substrate with a device region and a ring region surrounding it. There is a frontside interconnect structure above the substrate, consisting of a frontside interconnect region and a frontside seal ring region. Additionally, there is a backside interconnect structure below the substrate, consisting of a backside interconnect region and a backside seal ring region. The frontside interconnect region is positioned over the device region, while the backside interconnect region is positioned below it. The frontside seal ring region is located over the ring region, and the backside seal ring region is located below it.

  • The semiconductor structure has dual side seal rings.
  • It includes a substrate with a device region and a ring region.
  • There is a frontside interconnect structure above the substrate.
  • The frontside interconnect structure has a frontside interconnect region and a frontside seal ring region.
  • There is a backside interconnect structure below the substrate.
  • The backside interconnect structure has a backside interconnect region and a backside seal ring region.
  • The frontside interconnect region is positioned over the device region.
  • The backside interconnect region is positioned below the device region.
  • The frontside seal ring region is located over the ring region.
  • The backside seal ring region is located below the ring region.

Potential Applications

  • Semiconductor manufacturing
  • Integrated circuit design
  • Electronics industry

Problems Solved

  • Provides a structure with dual side seal rings for improved performance and reliability.
  • Helps in preventing leakage and improving isolation between different regions of the semiconductor device.

Benefits

  • Enhanced performance and reliability of semiconductor devices.
  • Improved isolation and prevention of leakage.
  • Enables more efficient and effective semiconductor manufacturing processes.


Original Abstract Submitted

A semiconductor structure with dual side seal rings is provided. A semiconductor structure according to the present disclosure include a substrate including a device region and a ring region surrounding the device region, a frontside interconnect structure disposed over the substrate and including a frontside interconnect region and a frontside seal ring region, and a backside interconnect structure disposed below the substrate and including a backside interconnect region and a backside seal ring region. The frontside interconnect region is disposed over the device region and the backside interconnect region is disposed below the device region. The frontside seal ring region is disposed over the ring region and the backside seal ring region is disposed below the ring region.