17707481. Semiconductor Devices and Methods of Manufacture simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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Semiconductor Devices and Methods of Manufacture

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yen-Kun Lai of New Taipei City (TW)

Yi-Wen Wu of Xizhi City (TW)

Kuo-Chin Chang of Chiayi City (TW)

Po-Hao Tsai of Zhongli City (TW)

Mirng-Ji Lii of Sinpu Township (TW)

Semiconductor Devices and Methods of Manufacture - A simplified explanation of the abstract

This abstract first appeared for US patent application 17707481 titled 'Semiconductor Devices and Methods of Manufacture

Simplified Explanation

The abstract describes a patent application for semiconductor devices and manufacturing methods. Here is a simplified explanation of the abstract:

  • The patent application describes a process for manufacturing semiconductor devices.
  • A first passivation layer is deposited over a top redistribution structure, which helps protect and insulate the device.
  • A second passivation layer is then deposited over the first passivation layer.
  • A first opening is formed through the second passivation layer, creating a pathway for further processing.
  • The first opening is reshaped into a second opening, likely to optimize the structure for subsequent steps.
  • A third opening is formed through the first passivation layer, creating another pathway for processing.
  • The second opening and the third opening are filled with a conductive material, which may enhance the electrical performance of the device.

Potential applications of this technology:

  • This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
  • It can be used in the production of electronic devices like smartphones, computers, and other consumer electronics.

Problems solved by this technology:

  • The deposition of passivation layers and the formation of openings are crucial steps in semiconductor device manufacturing. This technology provides a method for efficiently and accurately performing these steps.
  • The reshaping of the first opening into a second opening allows for optimization of the device structure, potentially improving its performance.

Benefits of this technology:

  • The use of passivation layers helps protect the device from external factors like moisture, dust, and physical damage.
  • The deposition of a conductive material in the openings can enhance the electrical connectivity and performance of the device.
  • The method described in the patent application provides a more efficient and precise way of manufacturing semiconductor devices, potentially reducing production costs and improving overall device quality.


Original Abstract Submitted

Semiconductor devices and methods of manufacturing are provided, wherein a first passivation layer is deposited over a top redistribution structure; a second passivation layer is deposited over the first passivation layer; and a first opening is formed through the second passivation layer. After the forming the first opening, the first opening is reshaped into a second opening; a third opening is formed through the first passivation layer; and filling the second opening and the third opening with a conductive material.

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