17703130. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Kanamori Kohji of Seongnam-si (KR)
Jeehoon Han of Hwaseong-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17703130 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Simplified Explanation
The patent application describes three-dimensional semiconductor memory devices and methods of manufacturing them. It also discusses electronic systems that include these memory devices. Here are the key points:
- The memory device includes a peripheral circuit structure on a substrate and a cell array structure with a stack structure.
- The stack structure consists of gate electrodes on the peripheral circuit structure, a first source conductive pattern, and vertical channel structures.
- The vertical channel structures are located in vertical channel holes that penetrate the stack structure and the first source conductive pattern.
- The vertical channel structure includes a data storage pattern on the sidewall of the vertical channel hole, a vertical semiconductor pattern, and a second source conductive pattern.
- The data storage pattern is thicker between the first source conductive pattern and the second source conductive pattern compared to its thickness between the stack structure and the vertical semiconductor pattern.
Potential applications of this technology:
- Memory devices with higher storage capacity and performance
- Electronic systems requiring efficient and compact memory solutions
Problems solved by this technology:
- Increasing the storage capacity and performance of memory devices
- Enhancing the efficiency and compactness of electronic systems
Benefits of this technology:
- Higher storage capacity due to the three-dimensional structure
- Improved performance and speed of data storage and retrieval
- Compact design, allowing for more efficient use of space in electronic systems
Original Abstract Submitted
Disclosed are three-dimensional semiconductor memory devices, methods of manufacturing the same, and electronic systems including the same. The device includes a peripheral circuit structure on a substrate, and a cell array structure including a stack structure that includes gate electrodes on the peripheral circuit structure, a first source conductive pattern on the stack structure, and vertical channel structures in vertical channel holes that penetrate the stack structure and the first source conductive pattern. The vertical channel structure includes a data storage pattern on a sidewall of the vertical channel hole, a vertical semiconductor pattern on the data storage pattern, and a second source conductive pattern on the vertical semiconductor pattern and surrounded by the data storage pattern. A thickness of the data storage pattern between the first source conductive pattern and the second source conductive pattern is greater than it is between the stack structure and the vertical semiconductor pattern.
