17703057. METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE simplified abstract (KIA CORPORATION)
Contents
- 1 METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE
Organization Name
Inventor(s)
Kyoung-Kook Hong of Hwaseong-si (KR)
Su-Bin Kang of Seongnam-si (KR)
Young-Seok Kim of Seongnam-si (KR)
METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17703057 titled 'METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE
Simplified Explanation
The present disclosure describes a method for manufacturing a double-sided cooling type power module. The method involves patterning a bonding material on a base film into two regions, positioning a semiconductor chip on the patterned bonding material, transferring the patterned bonding material to one surface of the semiconductor chip by pressurizing the chip, positioning the bonding material of the chip on an upper electrode layer formed on an upper substrate, and sintering an upper bonding layer by pressurizing and heating the chip.
- The method allows for separate disposition of bonding material on the gate and source electrode parts of the chip.
- The bonding material is patterned on a base film before being transferred to the chip, eliminating the need for protrusion to directly bond the chip and the substrate.
- The upper bonding layer is sintered through pressurization and heating, ensuring a strong bond between the chip and the substrate.
Potential Applications
This method for manufacturing a double-sided cooling type power module can be applied in various industries, including:
- Power electronics industry
- Automotive industry
- Renewable energy industry
Problems Solved
The method solves the following problems:
- Difficulty in separately disposing bonding material on each gate and source electrode part of the chip
- Challenges in directly bonding the chip and the substrate without protrusion
- Weak bonding between the chip and the substrate
Benefits
The use of this method offers the following benefits:
- Improved efficiency and performance of power modules
- Enhanced thermal management capabilities
- Simplified manufacturing process
- Strong and reliable bonding between the chip and the substrate
Original Abstract Submitted
The present disclosure provides a method for manufacturing a double-sided cooling type power module including separately patterning a bonding material on a base film into two regions, positioning a semiconductor chip on the patterned bonding material, transferring the patterned bonding material to one surface of the semiconductor chip by pressurizing the semiconductor chip, positioning the bonding material of the semiconductor chip on an upper electrode layer formed on an upper substrate to be in contact with the upper electrode layer, and sintering an upper bonding layer by pressurizing and heating the semiconductor chip. According to the present disclosure, it is possible to separately dispose the bonding material on each of gate and source electrode parts on an upper portion of the chip even without protrusion to directly bond the chip and the substrate.
