17703057. METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE simplified abstract (HYUNDAI MOTOR COMPANY)
Contents
- 1 METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE
Organization Name
Inventor(s)
Kyoung-Kook Hong of Hwaseong-si (KR)
Su-Bin Kang of Seongnam-si (KR)
Young-Seok Kim of Seongnam-si (KR)
METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17703057 titled 'METHOD FOR MANUFACTURING DOUBLE-SIDED COOLING TYPE POWER MODULE AND DOUBLE-SIDED COOLING TYPE POWER MODULE
Simplified Explanation
The present disclosure describes a method for manufacturing a double-sided cooling type power module. The method involves patterning a bonding material on a base film into two regions and positioning a semiconductor chip on the patterned bonding material. The patterned bonding material is then transferred to one surface of the semiconductor chip by pressurizing the chip. The bonding material of the semiconductor chip is positioned on an upper electrode layer formed on an upper substrate and is sintered by pressurizing and heating the chip.
- The method allows for separate disposition of bonding material on gate and source electrode parts on the chip.
- The bonding material is patterned on a base film and transferred to the semiconductor chip, enabling direct bonding of the chip and the substrate.
- The upper bonding layer is sintered through pressurization and heating of the semiconductor chip.
Potential Applications
This method for manufacturing a double-sided cooling type power module can be applied in various industries and applications, including:
- Power electronics: The power module can be used in power converters, inverters, and motor drives.
- Electric vehicles: The power module can be integrated into the powertrain system of electric vehicles for efficient power management.
- Renewable energy systems: The power module can be utilized in solar inverters and wind turbine converters for converting and managing power from renewable sources.
Problems Solved
The method described in the patent application solves several problems associated with manufacturing double-sided cooling type power modules, including:
- Separate disposition of bonding material: The method allows for separate patterning and disposition of bonding material on different electrode parts of the semiconductor chip, ensuring proper electrical connections.
- Direct bonding without protrusion: The method enables direct bonding of the chip and the substrate without the need for protrusions, simplifying the manufacturing process and reducing the risk of electrical shorts.
- Efficient sintering of bonding layer: The pressurization and heating of the semiconductor chip facilitate efficient sintering of the upper bonding layer, ensuring strong and reliable electrical connections.
Benefits
The method for manufacturing a double-sided cooling type power module offers several benefits, including:
- Enhanced electrical connections: The separate disposition of bonding material on different electrode parts ensures reliable and efficient electrical connections.
- Simplified manufacturing process: The direct bonding of the chip and the substrate without protrusions simplifies the manufacturing process, reducing production time and costs.
- Improved thermal management: The double-sided cooling design of the power module allows for efficient heat dissipation, enhancing the overall performance and reliability of the module.
Original Abstract Submitted
The present disclosure provides a method for manufacturing a double-sided cooling type power module including separately patterning a bonding material on a base film into two regions, positioning a semiconductor chip on the patterned bonding material, transferring the patterned bonding material to one surface of the semiconductor chip by pressurizing the semiconductor chip, positioning the bonding material of the semiconductor chip on an upper electrode layer formed on an upper substrate to be in contact with the upper electrode layer, and sintering an upper bonding layer by pressurizing and heating the semiconductor chip. According to the present disclosure, it is possible to separately dispose the bonding material on each of gate and source electrode parts on an upper portion of the chip even without protrusion to directly bond the chip and the substrate.
