17702155. ANTI-FERROELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
ANTI-FERROELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Boeun Park of Hwaseong-si (KR)
Jeonggyu Song of Seongnam-si (KR)
ANTI-FERROELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17702155 titled 'ANTI-FERROELECTRIC THIN-FILM STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
Simplified Explanation
The abstract describes an anti-ferroelectric thin-film structure that can be applied to electronic devices to achieve a section with little hysteresis in the operating voltage. The structure includes a dielectric layer made of hafnium oxide in an anti-ferroelectric phase, and an inserted layer made of an oxide material.
- The anti-ferroelectric thin-film structure includes:
* Dielectric layer: Made of hafnium oxide in an anti-ferroelectric phase. * Inserted layer: Made of an oxide material.
- The structure is applied to electronic devices to secure an operating voltage section with minimal hysteresis.
- The use of hafnium oxide in an anti-ferroelectric phase provides unique properties to the thin-film structure.
- The inserted layer made of an oxide material further enhances the performance of the structure.
- The technology can be used in various electronic devices where a stable operating voltage section is desired.
- Potential applications include memory devices, capacitors, and other electronic components.
- The technology solves the problem of hysteresis in the operating voltage section of electronic devices.
- By using the anti-ferroelectric thin-film structure, the operating voltage section can be secured with minimal hysteresis.
- The benefits of this technology include improved stability and reliability of electronic devices.
- The technology enables more precise control over the operating voltage section, leading to better performance.
- The anti-ferroelectric thin-film structure can be easily integrated into existing electronic device manufacturing processes.
Original Abstract Submitted
An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
