17699496. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jongmin Baek of Seoul (KR)

Junghoo Shin of Seoul (KR)

Sangshin Jang of Seoul (KR)

Junghwan Chun of Anyang-si (KR)

Kyeongbeom Park of Suwon-si (KR)

Suhyun Bark of Seongnam-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17699496 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with multiple layers and components that are electrically connected to each other. Here is a simplified explanation of the abstract:

  • The semiconductor device has a substrate with an active region.
  • It includes two insulating layers, with an etch stop layer in between.
  • There is a via contact in the first insulating layer, which is connected to the active region.
  • An interconnection electrode is present in the second insulating layer, which is connected to the via contact.
  • A conductive barrier layer is on the side and lower surfaces of the interconnection electrode, extending partially to a side surface of the via contact.
  • A side insulating layer is on the side region of the via contact, below the extension of the conductive barrier layer.
  • The side insulating layer has the same material as the etch stop layer.

Potential applications of this technology:

  • Semiconductor devices used in electronic devices such as smartphones, computers, and tablets.
  • Integrated circuits and microprocessors.
  • Power electronics and energy conversion systems.

Problems solved by this technology:

  • Provides improved electrical connections between different layers and components in a semiconductor device.
  • Reduces the risk of short circuits and other electrical issues.
  • Enhances the overall performance and reliability of the semiconductor device.

Benefits of this technology:

  • Improved electrical connectivity and signal transmission within the semiconductor device.
  • Enhanced reliability and performance of the device.
  • Reduced risk of electrical failures and malfunctions.
  • Enables the development of more advanced and efficient electronic devices.


Original Abstract Submitted

A semiconductor device includes a substrate having an active region, a first insulating layer on the substrate, a second insulating layer on the first insulating layer, an etch stop layer between the first insulating layer and the second insulating layer, a via contact in the first insulating layer and electrically connected to the active region, an interconnection electrode in the second insulating layer and electrically connected to the via contact, a conductive barrier layer on a side surface and a lower surface of the interconnection electrode and having an extension portion extending to a partial region of a side surface of the via contact, and a side insulating layer on a side region of the via contact below the extension portion of the conductive barrier layer, the side insulating layer including the same material as a material of the etch stop layer.