View source for 17696989. THERMAL PAD, SEMICONDUCTOR CHIP INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SEMICONDUCTOR CHIP simplified abstract (Samsung Electronics Co., Ltd.)

=THERMAL PAD, SEMICONDUCTOR CHIP INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SEMICONDUCTOR CHIP=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Jimin Choi of Seoul (KR)|Jimin Choi of Seoul (KR)]][[Category:Jimin Choi of Seoul (KR)]]

[[:Category:Jeonil Lee of Suwon-si (KR)|Jeonil Lee of Suwon-si (KR)]][[Category:Jeonil Lee of Suwon-si (KR)]]

[[:Category:Jongmin Lee of Hwaseong-si (KR)|Jongmin Lee of Hwaseong-si (KR)]][[Category:Jongmin Lee of Hwaseong-si (KR)]]

[[:Category:Juik Lee of Anyang-si (KR)|Juik Lee of Anyang-si (KR)]][[Category:Juik Lee of Anyang-si (KR)]]

==THERMAL PAD, SEMICONDUCTOR CHIP INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SEMICONDUCTOR CHIP - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17696989 titled 'THERMAL PAD, SEMICONDUCTOR CHIP INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SEMICONDUCTOR CHIP

==Simplified Explanation==

The abstract describes a thermal pad for a semiconductor chip, the chip itself, and a method of manufacturing the chip. The thermal pad is designed to receive heat generated from a through silicon via (TSV) and dissipate it through a thermal head. The pad includes a thermal core in a trench on the lower surface of the semiconductor substrate, with insulation layers surrounding it.

* The thermal pad is located on the lower surface of a semiconductor chip.
* It includes a thermal core in a trench that receives heat from a through silicon via (TSV).
* A thermal head is connected to the thermal core and protrudes from the lower surface of the chip.
* The thermal head is responsible for dissipating the heat received by the thermal core.
* The thermal core is insulated by a first insulation layer between the trench's inner surface and the core.
* A second insulation layer is present between the first insulation layer and the thermal core.

Potential applications of this technology:

* Semiconductor chips in electronic devices that generate significant heat.
* High-performance computing systems that require efficient heat dissipation.
* Power electronics applications where thermal management is crucial.

Problems solved by this technology:

* Efficiently dissipating heat generated by a through silicon via (TSV).
* Preventing heat from damaging the semiconductor chip.
* Improving the overall thermal management of the chip.

Benefits of this technology:

* Enhanced thermal management capabilities for semiconductor chips.
* Improved reliability and longevity of electronic devices.
* Increased performance and efficiency of high-power applications.


==Original Abstract Submitted==

A thermal pad of a semiconductor chip, a semiconductor chip including the thermal pad, and a method of manufacturing the semiconductor chip, the thermal pad including a thermal core in a trench at a lower surface of a semiconductor substrate, the thermal core being configured to receive heat generated from a through silicon via (TSV) vertically extending through the semiconductor substrate; a thermal head connected to the thermal core and protruding from the lower surface of the semiconductor substrate, the thermal head being configured to dissipate the heat in the thermal core; a first insulation layer between an inner surface of the trench and the thermal core; and a second insulation layer between the first insulation layer and the thermal core.



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