17695578. NON-VOLATILE MEMORY BASED COMPUTE-IN-MEMORY CELL simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
NON-VOLATILE MEMORY BASED COMPUTE-IN-MEMORY CELL
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Zheng-Jun Lin of Taichung City (TW)
Chung-Cheng Chou of Hsinchu (TW)
NON-VOLATILE MEMORY BASED COMPUTE-IN-MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17695578 titled 'NON-VOLATILE MEMORY BASED COMPUTE-IN-MEMORY CELL
Simplified Explanation
The abstract describes a memory device that includes a static random-access memory (SRAM) with two inverters and an access transistor. It also includes logic gates and a non-volatile memory that can store and read data using the SRAM. The non-volatile memory is connected to the access transistor and the two inverters.
- The memory device includes a static random-access memory (SRAM) with two inverters and an access transistor.
- One or more logic gates are connected to the SRAM.
- A non-volatile memory is connected to the SRAM and can store and read data using the SRAM.
- The non-volatile memory is connected to the access transistor and the two inverters.
Potential Applications
- This memory device can be used in various electronic devices such as computers, smartphones, and IoT devices.
- It can be utilized in data storage systems, allowing for efficient and reliable data storage and retrieval.
Problems Solved
- The memory device solves the problem of volatile memory by incorporating a non-volatile memory that can retain data even when power is lost.
- It addresses the need for a memory device that can store and retrieve data quickly and reliably.
Benefits
- The memory device provides a combination of volatile and non-volatile memory, allowing for fast data access and reliable data storage.
- It offers improved power efficiency compared to traditional memory devices.
- The device can be easily integrated into existing electronic systems and architectures.
Original Abstract Submitted
A memory device including a static random-access memory that includes two cross-coupled inverters and an access transistor having a gate connected to a word line. The memory device further includes one or more logic gates electrically coupled to the static random-access memory, and a non-volatile memory electrically coupled to the static random-access memory and configured to store data and be read using the static random-access memory, wherein the non-volatile memory is connected on one side to the access transistor and on another side to the two cross-coupled inverters.
