17692996. SENSE AMPLIFIER WITH READ CIRCUIT FOR COMPUTE-IN-MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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SENSE AMPLIFIER WITH READ CIRCUIT FOR COMPUTE-IN-MEMORY

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chieh Lee of Hsinchu (TW)

Chia-En Huang of Hsinchu County (TW)

Yi-Ching Liu of Hsinchu City (TW)

Wen-Chang Cheng of Richmond TX (US)

Yih Wang of Hsinchu City (TW)

SENSE AMPLIFIER WITH READ CIRCUIT FOR COMPUTE-IN-MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17692996 titled 'SENSE AMPLIFIER WITH READ CIRCUIT FOR COMPUTE-IN-MEMORY

Simplified Explanation

The abstract describes a memory device that includes a memory array, a sense amplifier circuit, and a read circuit. The read circuit is activated by a read column select signal to read data from the memory array during a read operation.

  • The memory device includes a memory array, which is a component that stores data.
  • The sense amplifier circuit is coupled to the memory array, meaning it is connected to it.
  • The read circuit is also coupled to the sense amplifier circuit, indicating a connection between them.
  • The read circuit has a first input that receives a read column select signal, which is a signal that activates the read circuit during a read operation.
  • The purpose of the read circuit is to read the data out of the memory array.

Potential Applications

  • This memory device can be used in various electronic devices that require data storage, such as computers, smartphones, and tablets.
  • It can be utilized in data centers and servers to store and retrieve large amounts of information.

Problems Solved

  • The memory device solves the problem of efficiently reading data from a memory array by including a read circuit that is activated by a read column select signal.
  • It addresses the need for a reliable and fast memory device that can be used in various applications.

Benefits

  • The memory device provides a means to store and retrieve data efficiently.
  • It allows for faster data access and retrieval, improving the overall performance of electronic devices.
  • The memory device is versatile and can be used in a wide range of applications.


Original Abstract Submitted

A memory device including a memory array configured to store data, a sense amplifier circuit coupled to the memory array, and a read circuit coupled to the sense amplifier circuit, wherein the read circuit includes a first input that receives a read column select signal for activating the read circuit to read the data out of the memory array through the read circuit during a read operation.

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