17692953. METHOD OF OPERATING MEMORY DEVICE, METHOD OF OPERATING MEMORY CONTROLLER AND MEMORY SYSTEM simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)

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METHOD OF OPERATING MEMORY DEVICE, METHOD OF OPERATING MEMORY CONTROLLER AND MEMORY SYSTEM

Organization Name

SAMSUNG ELECTRONICS CO.,LTD.

Inventor(s)

Ki-Heung Kim of Suwon-si (KR)

Jun Hyung Kim of Suwon-si (KR)

Chang-Yong Lee of Hwaseong-si (KR)

Sang Uhn Cha of Suwon-si (KR)

Kyung-Soo Ha of Hwaseong-si (KR)

METHOD OF OPERATING MEMORY DEVICE, METHOD OF OPERATING MEMORY CONTROLLER AND MEMORY SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 17692953 titled 'METHOD OF OPERATING MEMORY DEVICE, METHOD OF OPERATING MEMORY CONTROLLER AND MEMORY SYSTEM

Simplified Explanation

The abstract describes a method for operating a memory device. Here is a simplified explanation of the abstract:

  • The method involves receiving a command from a controller.
  • A page of a memory cell array is activated based on the received command.
  • The data of the activated page is read.
  • An error is detected from the read data.
  • If the detected error is a single-bit error, the error is corrected and error correction data is generated.
  • The error correction data is then written back to the activated page.
  • However, if the detected error is a multi-bit error, the write-back of the error correction data to the activated page is blocked.

Potential applications of this technology:

  • Memory devices in various electronic devices such as computers, smartphones, and tablets.
  • Data storage systems in cloud computing and data centers.
  • Solid-state drives (SSDs) and flash memory devices.

Problems solved by this technology:

  • Errors in memory cells can occur due to various factors such as noise, interference, or physical degradation.
  • Single-bit errors can be corrected, but multi-bit errors are more challenging to handle.
  • This method provides a way to detect and correct single-bit errors while preventing the write-back of potentially incorrect data in the case of multi-bit errors.

Benefits of this technology:

  • Improved reliability and data integrity in memory devices.
  • Enhanced error correction capabilities, especially for single-bit errors.
  • Efficient use of memory resources by blocking the write-back of error correction data in the case of multi-bit errors.


Original Abstract Submitted

A method of operating a memory device is provided. The method includes: receiving a first command from a controller; activating a page of a memory cell array based on the first command; reading data of the activated page; detecting an error from the read data; correcting the detected error to generate error correction data; writing back the error correction data to the activated page in based on the detected error being a single-bit error; and blocking write-back of the error correction data to the activated page based on the detected error being a multi-bit error.