17690150. METHODS FOR CLEANING LITHOGRAPHY MASK simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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METHODS FOR CLEANING LITHOGRAPHY MASK

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

I-Hsiung Huang of Hsinchu County (TW)

Yung-Cheng Chen of Jhubei City (TW)

Chi-Lun Lu of Hsinchu City (TW)

METHODS FOR CLEANING LITHOGRAPHY MASK - A simplified explanation of the abstract

This abstract first appeared for US patent application 17690150 titled 'METHODS FOR CLEANING LITHOGRAPHY MASK

Simplified Explanation

The patent application describes methods for removing haze defects from a photomask or reticle using a hydrogen atmosphere and radiation. The methods can be performed on-site and quickly, without the need for wet chemicals or removing the pellicle before cleaning.

  • The photomask is placed in a chamber with a hydrogen atmosphere.
  • Radiation is applied to the photomask, causing the haze defects to decompose.
  • The combination of radiation and hydrogen effectively removes the haze defects.
  • The methods can be performed on-site, saving time and resources.
  • Wet chemicals and pellicle removal are not required, simplifying the cleaning process.

Potential Applications

  • Semiconductor manufacturing
  • Photolithography processes
  • Optics manufacturing

Problems Solved

  • Haze defects on photomasks and reticles
  • Time-consuming and resource-intensive cleaning processes
  • Need for wet chemicals and pellicle removal

Benefits

  • On-site and quick cleaning of photomasks
  • Elimination of haze defects without the use of wet chemicals
  • Simplified cleaning process without the need to remove the pellicle


Original Abstract Submitted

Methods for removing haze defects from a photomask or reticle are disclosed. The photomask is placed into a chamber which includes a hydrogen atmosphere. The photomask is then exposed to radiation. The energy from the radiation, together with the hydrogen, causes decomposition of the haze defects. The methods can be practiced on-site and quickly, without the need for wet chemicals or the need to remove the pellicle before cleaning of the photomask. A device for conducting the methods is also disclosed herein.

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