17683765. SEMICONDUCTOR DEVICES HAVING SUPPORTER STRUCTURES simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICES HAVING SUPPORTER STRUCTURES
Organization Name
Inventor(s)
Kiseok Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES HAVING SUPPORTER STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17683765 titled 'SEMICONDUCTOR DEVICES HAVING SUPPORTER STRUCTURES
Simplified Explanation
The patent application describes a semiconductor device with lower electrodes and a first supporter structure that interconnects the lower electrodes. The first supporter patterns create an open region between them, exposing the side surfaces of the lower electrodes. The device also includes a dielectric layer and an upper electrode.
- The first supporter patterns in the device are spaced apart from each other, creating a horizontal open region among them.
- The distance between adjacent first supporter patterns is equal to or smaller than the pitch of the lower electrodes.
Potential Applications
This technology can be applied in various semiconductor devices, including but not limited to:
- Integrated circuits
- Transistors
- Memory devices
- Sensors
Problems Solved
The technology addresses the following issues in semiconductor devices:
- Efficient interconnection of lower electrodes
- Minimization of space usage
- Enhanced performance and functionality
Benefits
The use of this technology offers several advantages:
- Improved electrical connectivity between lower electrodes
- Reduction in device size and footprint
- Enhanced overall performance and functionality of the semiconductor device
Original Abstract Submitted
A semiconductor device includes lower electrodes, a first supporter structure including first supporter patterns interconnecting the lower electrodes, wherein side surfaces of the first supporter patterns and side surfaces of the lower electrodes that are exposed by the first supporter patterns at least partially define a first open region, the first supporter patterns being spaced apart from one another, the first open region extending among the first supporter patterns in a horizontal direction, a dielectric layer covering the first supporter structure and the lower electrodes, and an upper electrode on the dielectric layer. A distance between adjacent ones of the first supporter patterns is smaller than or equal to a pitch of the lower electrodes.
