17679537. CHAMBER WALL POLYMER PROTECTION SYSTEM AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

From WikiPatents
Jump to navigation Jump to search

CHAMBER WALL POLYMER PROTECTION SYSTEM AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Po-Hsun Tseng of New Taipei City (TW)

Yan-Hong Liu of Zhudong Township (TW)

CHAMBER WALL POLYMER PROTECTION SYSTEM AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 17679537 titled 'CHAMBER WALL POLYMER PROTECTION SYSTEM AND METHOD

Simplified Explanation

The patent application describes a method for cleaning an etch process chamber using oscillators and microwaves. Here are the key points:

  • The etch process chamber has oscillators positioned a certain distance away from the outer wall and connected to a microwave generator.
  • The inner wall of the chamber, where particulates from the etch process adhere, is vibrated using the oscillators.
  • A gas is introduced into the cavity formed by the inner wall to collect the displaced particulates.
  • The gas with the particulates is then pumped out of the cavity to clean the process chamber.
  • A controller determines the polymer recipe used in the etch process and selects an oscillation program from memory.
  • The microwave generator, controlled by the controller, generates microwaves at specific frequencies determined by the program.
  • The frequencies are communicated to the oscillators, which vibrate the inner wall at those received frequencies.

Potential applications of this technology:

  • Cleaning and maintaining etch process chambers used in semiconductor manufacturing.
  • Removing particulates and polymers from the inner walls of other types of process chambers.

Problems solved by this technology:

  • Efficiently and effectively removing particulates and polymers from the inner walls of process chambers.
  • Minimizing downtime and maintenance required for cleaning process chambers.

Benefits of this technology:

  • Improved cleanliness and performance of process chambers, leading to better quality semiconductor products.
  • Reduced downtime and maintenance costs associated with cleaning process chambers.
  • Automation and control of the cleaning process, ensuring consistent and optimized results.


Original Abstract Submitted

In an etch process chamber, oscillators are positioned a predetermined distance away from an outer wall and coupled to a microwave generator. An inner wall of the process chamber on which particulates such as polymers adhere from the etch process is vibrated via operations of the oscillators. A gas flows into the cavity defined by the inner wall to collect the displaced particulates, which is then pumped out of the cavity to clean the process chamber. A controller identifies the polymer recipe used during the etch process and selects an oscillation program from memory. A microwave generator, controlled by the controller, is directed to generate microwaves at preselected frequencies determined from the program. The microwave frequencies are communicated to the oscillators, which then vibrate the inner wall at such received frequencies.

Retrieved from "http://wikipatents.org/index.php?title=17679537._CHAMBER_WALL_POLYMER_PROTECTION_SYSTEM_AND_METHOD_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=23595"