17674575. Photoresist and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Photoresist and Method
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chih-Cheng Liu of Hsinchu (TW)
Jr-Hung Li of Chupei City (TW)
Photoresist and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 17674575 titled 'Photoresist and Method
Simplified Explanation
The patent application describes a method for forming and using photoresists, which are materials used in the manufacturing of electronic devices. The method involves coating a hard mask layer over a target layer, depositing a photoresist layer using chemical vapor deposition or atomic layer deposition, heating the photoresist layer to cause cross-linking between organometallic precursors, exposing the photoresist layer to patterned energy, heating the photoresist layer to cause de-crosslinking in a specific portion, and removing that portion of the photoresist layer.
- The method involves spin-on coating a hard mask layer over a target layer.
- A photoresist layer is then deposited using chemical vapor deposition or atomic layer deposition.
- The photoresist layer is heated to cause cross-linking between organometallic precursors, which helps in forming a stable structure.
- The photoresist layer is exposed to patterned energy, which helps in creating a desired pattern.
- The photoresist layer is heated again to cause de-crosslinking in a specific portion, making it easier to remove that portion.
- The de-crosslinked portion of the photoresist layer is then removed, leaving behind the desired pattern.
Potential applications of this technology:
- Semiconductor manufacturing: This method can be used in the fabrication of integrated circuits and other semiconductor devices.
- Nanofabrication: The method can be applied in the production of nanoscale structures and devices.
- Optoelectronics: It can be used in the manufacturing of optical devices such as displays and sensors.
Problems solved by this technology:
- Precise patterning: The method allows for the creation of highly precise patterns on a target layer.
- Improved stability: The cross-linking of organometallic precursors provides a more stable photoresist layer.
- Easy removal: The de-crosslinked portion of the photoresist layer can be easily removed, leaving behind the desired pattern.
Benefits of this technology:
- Enhanced manufacturing efficiency: The method enables faster and more efficient production of electronic devices.
- Improved device performance: The precise patterning and stability of the photoresist layer contribute to better device performance.
- Cost-effective: The method can help reduce manufacturing costs by optimizing the use of materials and improving yield rates.
Original Abstract Submitted
Photoresists and methods of forming and using the same are disclosed. In an embodiment, a method includes spin-on coating a first hard mask layer over a target layer; depositing a photoresist layer over the first hard mask layer using chemical vapor deposition or atomic layer deposition, the photoresist layer being deposited using one or more organometallic precursors; heating the photoresist layer to cause cross-linking between the one or more organometallic precursors; exposing the photoresist layer to patterned energy; heating the photoresist layer to cause de-crosslinking in the photoresist layer forming a de-crosslinked portion of the photoresist layer; and removing the de-crosslinked portion of the photoresist layer.
