17674459. Semiconductor Device with Integrated Metal-Insulator-Metal Capacitors simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Semiconductor Device with Integrated Metal-Insulator-Metal Capacitors
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wei-Zhong Chen of Taipei City (TW)
JeiMing Chen of Tainan City (TW)
Semiconductor Device with Integrated Metal-Insulator-Metal Capacitors - A simplified explanation of the abstract
This abstract first appeared for US patent application 17674459 titled 'Semiconductor Device with Integrated Metal-Insulator-Metal Capacitors
Simplified Explanation
The patent application describes a semiconductor device that includes metal-insulator-metal (MIM) capacitors. These capacitors have a layered structure with different materials and are placed over an etch stop layer.
- The MIM capacitors have a bottom electrode with a layered structure consisting of three conductive layers.
- The first and second conductive layers are made of the same material, while the third conductive layer is made of a different material.
- The capacitors also include a first dielectric layer over the bottom electrode, a middle electrode with a layered structure, a second dielectric layer over the middle electrode, and a top electrode over the second dielectric layer.
Potential applications of this technology:
- Integrated circuits and semiconductor devices that require high-performance capacitors.
- Memory devices, such as DRAM or SRAM, where capacitors are essential for data storage.
- Power electronics, where capacitors are used for energy storage and voltage regulation.
Problems solved by this technology:
- The layered structure of the MIM capacitors improves their performance and reliability.
- The use of different materials in the conductive layers allows for better control of electrical properties.
- The etch stop layer helps protect the underlying interconnect structure during fabrication processes.
Benefits of this technology:
- Improved capacitance and energy storage capabilities.
- Enhanced performance and reliability of integrated circuits and semiconductor devices.
- Better control over electrical properties, leading to more efficient power electronics.
Original Abstract Submitted
A semiconductor device includes: a substrate; an interconnect structure over the substrate; an etch stop layer over the interconnect structure; and metal-insulator-metal (MIM) capacitors over the etch stop layer. The MIM capacitors includes: a bottom electrode extending along the etch stop layer, where the bottom electrode has a layered structure that includes a first conductive layer, a second conductive layer, and a third conductive layer between the first conductive layer and the second conductive layer, where the first conductive layer and the second conductive layer include a first material, and the third conductive layer includes a second material different from the first material; a first dielectric layer over the bottom electrode; a middle electrode over the first dielectric layer, where the middle electrode has the layered structure; a second dielectric layer over the middle electrode; and a top electrode over the second dielectric layer.
