View source for 17662301. SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Minjung Choi of Suwon-si (KR)|Minjung Choi of Suwon-si (KR)]][[Category:Minjung Choi of Suwon-si (KR)]]

[[:Category:Jongmin Lee of Hwaseong-si (KR)|Jongmin Lee of Hwaseong-si (KR)]][[Category:Jongmin Lee of Hwaseong-si (KR)]]

[[:Category:Jimin Choi of Seoul (KR)|Jimin Choi of Seoul (KR)]][[Category:Jimin Choi of Seoul (KR)]]

==SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17662301 titled 'SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME

==Simplified Explanation==

The abstract describes a semiconductor device that includes a substrate, a transistor, and a wiring structure. The wiring structure consists of contact wirings that are electrically connected to the transistor. The structure also includes multiple layers of insulating materials and a first material layer made of SiN and a second material layer made of SiCN. The dielectric constant of the first wiring insulating layer is higher than that of the second wiring insulating layer.

* The semiconductor device includes a substrate, transistor, and wiring structure.
* The wiring structure consists of contact wirings connected to the transistor.
* The wiring structure includes multiple layers of insulating materials.
* The first material layer in the wiring structure is made of SiN.
* The second material layer in the wiring structure is made of SiCN.
* The dielectric constant of the first wiring insulating layer is higher than that of the second wiring insulating layer.

==Potential Applications==
* This technology can be used in the manufacturing of semiconductor devices.
* It can be applied in various electronic devices that utilize transistors and wiring structures.

==Problems Solved==
* The use of different material layers with varying dielectric constants helps in optimizing the performance of the semiconductor device.
* The specific combination of SiN and SiCN layers in the wiring structure provides improved electrical properties.

==Benefits==
* The use of SiN and SiCN layers in the wiring structure enhances the overall performance of the semiconductor device.
* The higher dielectric constant of the first wiring insulating layer can improve signal transmission and reduce signal loss.
* The combination of different material layers allows for better control and customization of the device's electrical properties.


==Original Abstract Submitted==

A semiconductor device according to the disclosure includes a substrate, a transistor connected to the substrate, and a wiring structure including contact wirings electrically connected to the transistor. The wiring structure further includes a first wiring insulating layer, a first material layer contacting the first wiring insulating layer, a second material layer contacting the first material layer, and a second wiring insulating layer contacting the second material layer. The first material layer includes SiN, and the second material layer includes SiCN. A dielectric constant of the first wiring insulating layer is greater than a dielectric constant of the second wiring insulating layer.



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