17662301. SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jongmin Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17662301 titled 'SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate, a transistor, and a wiring structure. The wiring structure consists of contact wirings that are electrically connected to the transistor. The structure also includes multiple layers of insulating materials and a first material layer made of SiN and a second material layer made of SiCN. The dielectric constant of the first wiring insulating layer is higher than that of the second wiring insulating layer.
- The semiconductor device includes a substrate, transistor, and wiring structure.
- The wiring structure consists of contact wirings connected to the transistor.
- The wiring structure includes multiple layers of insulating materials.
- The first material layer in the wiring structure is made of SiN.
- The second material layer in the wiring structure is made of SiCN.
- The dielectric constant of the first wiring insulating layer is higher than that of the second wiring insulating layer.
Potential Applications
- This technology can be used in the manufacturing of semiconductor devices.
- It can be applied in various electronic devices that utilize transistors and wiring structures.
Problems Solved
- The use of different material layers with varying dielectric constants helps in optimizing the performance of the semiconductor device.
- The specific combination of SiN and SiCN layers in the wiring structure provides improved electrical properties.
Benefits
- The use of SiN and SiCN layers in the wiring structure enhances the overall performance of the semiconductor device.
- The higher dielectric constant of the first wiring insulating layer can improve signal transmission and reduce signal loss.
- The combination of different material layers allows for better control and customization of the device's electrical properties.
Original Abstract Submitted
A semiconductor device according to the disclosure includes a substrate, a transistor connected to the substrate, and a wiring structure including contact wirings electrically connected to the transistor. The wiring structure further includes a first wiring insulating layer, a first material layer contacting the first wiring insulating layer, a second material layer contacting the first material layer, and a second wiring insulating layer contacting the second material layer. The first material layer includes SiN, and the second material layer includes SiCN. A dielectric constant of the first wiring insulating layer is greater than a dielectric constant of the second wiring insulating layer.
