17657010. DUAL VERTICAL GATE AND IMAGE SENSOR INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

DUAL VERTICAL GATE AND IMAGE SENSOR INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

DONGMIN Han of Daegu (KR)

Wonhyeok Kim of HWASEONG-SI (KR)

SEONGJOO Nah of GWANGJU (KR)

HEEGEUN Jeong of SUWON-SI (KR)

DUAL VERTICAL GATE AND IMAGE SENSOR INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17657010 titled 'DUAL VERTICAL GATE AND IMAGE SENSOR INCLUDING THE SAME

Simplified Explanation

The abstract describes an image sensor with a dual vertical gate, which includes two vertical extension portions and a connection portion. The vertical extension portions are spaced apart and extend vertically into a substrate. An element isolation layer is placed next to the vertical extension portion. The two vertical extension portions are separated by a separation area, and the top surface of the separation area is lower than the top surface of the element isolation layer.

• The image sensor has a dual vertical gate design.
• It includes two vertical extension portions that extend into a substrate.
• The vertical extension portions are connected by a connection portion.
• An element isolation layer is placed next to the vertical extension portion.
• The two vertical extension portions are separated by a lower top surface separation area.

Potential Applications

• Image sensors for digital cameras and smartphones.
• Surveillance cameras and security systems.
• Medical imaging devices.
• Automotive cameras for advanced driver assistance systems.

Problems Solved

• Improved image quality and sensitivity.
• Enhanced performance in low-light conditions.
• Reduction of noise and interference.
• Increased pixel density and resolution.

Benefits

• Higher quality and more detailed images.
• Improved performance in challenging lighting conditions.
• Enhanced accuracy and reliability in image capture.
• Enables smaller and more compact image sensor designs.

Original Abstract Submitted

An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.