17655576. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Donghyun Kim of Hwaseong-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17655576 titled 'IMAGE SENSOR
Simplified Explanation
The patent application describes an image sensor that consists of three stacked structures. The first structure includes a substrate and at least one transistor. The second structure includes another substrate and at least one transistor. The third structure includes a substrate with a photoelectric conversion region, a transfer gate, and a reflective structure.
- The image sensor is composed of three stacked structures.
- The first structure has a substrate and at least one transistor.
- The second structure has another substrate and at least one transistor.
- The third structure has a substrate with a photoelectric conversion region, a transfer gate, and a reflective structure.
Potential applications of this technology:
- Digital cameras
- Mobile phones
- Surveillance systems
- Medical imaging devices
Problems solved by this technology:
- Improved image quality
- Increased sensitivity to light
- Reduction of noise and interference
Benefits of this technology:
- Higher resolution images
- Enhanced low-light performance
- Improved overall image quality
Original Abstract Submitted
An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.
