17651665. Wafer Bonding Incorporating Thermal Conductive Paths simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Wafer Bonding Incorporating Thermal Conductive Paths
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Su-Jen Sung of Zhubei City (TW)
Wafer Bonding Incorporating Thermal Conductive Paths - A simplified explanation of the abstract
This abstract first appeared for US patent application 17651665 titled 'Wafer Bonding Incorporating Thermal Conductive Paths
Simplified Explanation
The patent application describes a method for bonding two wafers together using thermal conductive channels. These channels have higher thermal conductivity values than the bond layers, allowing for efficient heat transfer between the wafers. An interconnect structure is then formed over the first wafer, providing electrical connections to integrated circuit devices.
- Method for bonding wafers using thermal conductive channels
- Channels have higher thermal conductivity than bond layers
- Efficient heat transfer between wafers
- Interconnect structure formed over the first wafer
- Provides electrical connections to integrated circuit devices
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Microchip fabrication
Problems Solved
- Improved heat dissipation in bonded wafers
- Enhanced performance and reliability of integrated circuits
- Efficient thermal management in electronic devices
Benefits
- Increased heat transfer efficiency
- Improved reliability of integrated circuits
- Enhanced performance of electronic devices
- Enables miniaturization and higher density of electronic components
Original Abstract Submitted
A method includes forming a first bond layer on a first wafer, and forming a first thermal conductive channel extending into the first bond layer. The first thermal conductive channel has a first thermal conductivity value higher than a second thermal conductivity value of the first bond layer. The method further includes forming a second bond layer on a second wafer, and forming a second thermal conductive channel extending into the second bond layer. The second thermal conductive channel has a third thermal conductivity value higher than a fourth thermal conductivity value of the second bond layer. The first wafer is bonded to the second wafer, and the first thermal conductive channel at least physically contacts the second thermal conductive channel. An interconnect structure is formed over the first wafer. The interconnect structure is electrically connected to integrated circuit devices in the first wafer.
