17644098. LAYERED BOTTOM ELECTRODE DIELECTRIC FOR EMBEDDED MRAM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

LAYERED BOTTOM ELECTRODE DIELECTRIC FOR EMBEDDED MRAM

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

ASHIM Dutta of CLIFTON PARK NY (US)

MICHAEL Rizzolo of DELMAR NY (US)

JON Slaughter of SLINGERLANDS NY (US)

CHIH-CHAO Yang of GLENMONT NY (US)

THEODORUS E. Standaert of CLIFTON PARK NY (US)

LAYERED BOTTOM ELECTRODE DIELECTRIC FOR EMBEDDED MRAM - A simplified explanation of the abstract

This abstract first appeared for US patent application 17644098 titled 'LAYERED BOTTOM ELECTRODE DIELECTRIC FOR EMBEDDED MRAM

Simplified Explanation

The abstract describes a patent application for an MRAM (Magnetoresistive Random Access Memory) device. The device includes multiple layers of dielectric cap layers and a bottom electrode contact (BEC) with an MRAM stack on top. The first dielectric cap layer has a lower-κ (lower dielectric constant) material compared to the second dielectric cap layer. The second dielectric cap layer surrounds the upper portion of the BEC.

• The MRAM device includes a first dielectric cap layer with a lower-κ material and a second dielectric cap layer with a higher-κ material.
• A bottom electrode contact (BEC) is formed through both dielectric cap layers.
• An MRAM stack is formed on top of the BEC.
• The second dielectric cap layer surrounds the upper part of the BEC.

Potential applications of this technology:

• MRAM devices can be used in various electronic devices, such as computers, smartphones, and IoT devices.
• The improved dielectric cap layers can enhance the performance and reliability of MRAM devices.

Problems solved by this technology:

• The use of different dielectric materials in the cap layers helps to optimize the performance of the MRAM device.
• The second dielectric cap layer surrounding the BEC provides additional protection and stability.

Benefits of this technology:

• The use of lower-κ and higher-κ materials in the dielectric cap layers can improve the overall efficiency and performance of the MRAM device.
• The surrounding second dielectric cap layer adds stability and protection to the BEC, enhancing the reliability of the MRAM device.

Original Abstract Submitted

An MRAM device is provided. The MRAM device includes a first dielectric cap layer formed on an underlying layer, a second dielectric cap layer formed on the first dielectric cap layer, the first dielectric cap layer including a lower-κ material than that of the second dielectric cap layer. The MRAM device also includes a bottom electrode contact (BEC) formed through the first dielectric cap layer and the second dielectric cap layer, an MRAM stack formed on the BEC, and wherein the second dielectric cap layer surrounds an upper portion of the BEC.