17643553. MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

RUQIANG Bao of Niskayuna NY (US)

Koji Watanabe of Yokohama (JP)

Muthumanickam Sankarapandian of Niskayuna NY (US)

Jingyun Zhang of Albany NY (US)

MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17643553 titled 'MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL

Simplified Explanation

The patent application describes a semiconductor structure that uses a nanosheet stack on a semiconductor substrate. The structure includes multiple layers of work function metal surrounding each channel in the nanosheet stack, with adjacent layers separated by a thin oxide material. An n-type work function metal is also included, covered by a capping material under a gate electrode material.

  • The semiconductor structure uses a nanosheet stack on a semiconductor substrate.
  • Multiple layers of work function metal surround each channel in the nanosheet stack.
  • The layers of work function metal are separated by a thin oxide material.
  • An n-type work function metal is included in the structure.
  • The n-type work function metal is covered by a capping material under a gate electrode material.

Potential Applications

  • This semiconductor structure can be used in various electronic devices, such as transistors and integrated circuits.
  • It can improve the performance and efficiency of these devices by providing better control over the flow of electrical current.

Problems Solved

  • The semiconductor structure solves the problem of controlling the flow of electrical current in nanosheet-based devices.
  • It addresses the challenge of maintaining proper work function levels in the structure to ensure optimal device performance.

Benefits

  • The use of a nanosheet stack and multiple layers of work function metal allows for precise control of electrical current in the semiconductor structure.
  • The thin oxide material between the layers of work function metal helps to maintain the integrity and stability of the structure.
  • The inclusion of an n-type work function metal and a capping material further enhances the performance and efficiency of the semiconductor structure.


Original Abstract Submitted

A semiconductor structure is formed using a nanosheet stack that is over a semiconductor substrate. The semiconductor structure includes multiple layers of work function that surround each channel of a plurality of channels in the nanosheet stack and are on the semiconductor substrate under the nanosheet stack. Adjacent layers of the work function metal in the semiconductor structure are separated by an oxide material. The oxide material is a very thin layer of an oxide with a thickness of several angstroms or less. The semiconductor structure includes an n-type work function metal that is over an outer layer of the multiple layers of the work function metal. The n-type work function metal can be an aluminum containing metal that is covered by a capping material under a gate electrode material.

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