17643416. PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

JUNTAO Li of COHOES NY (US)

KANGGUO Cheng of SCHENECTADY NY (US)

DEXIN Kong of REDMOND WA (US)

RUILONG Xie of NISKAYUNA NY (US)

PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17643416 titled 'PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS

Simplified Explanation

The abstract describes a phase change memory (PCM) device that includes a bottom electrode, a heater electrode with a tapered portion, an interlayer dielectric (ILD) layer with an airgap, a phase change layer, and a top electrode.

  • The PCM device has a bottom electrode on a substrate.
  • The heater electrode is formed on the bottom electrode and has a tapered portion that narrows away from the substrate.
  • An interlayer dielectric (ILD) layer is formed on the tapered portion of the heater electrode.
  • The ILD layer includes an airgap that partially surrounds the tapered portion of the heater electrode.
  • A phase change layer is formed on the heater electrode.
  • A top electrode is formed on the phase change layer.

Potential Applications

  • Phase change memory devices can be used in various electronic devices, such as smartphones, tablets, and computers.
  • The PCM device's unique structure and design can improve the performance and efficiency of memory storage in these devices.

Problems Solved

  • Traditional PCM devices may suffer from issues like high power consumption and limited scalability.
  • The tapered portion and airgap in the ILD layer of this PCM device help address these problems by enhancing heat transfer and reducing power consumption.

Benefits

  • The tapered portion of the heater electrode allows for better control of heat distribution and reduces power consumption.
  • The airgap in the ILD layer enhances heat transfer and improves the overall efficiency of the PCM device.
  • The unique design of this PCM device can lead to improved memory storage performance, lower power consumption, and increased scalability.


Original Abstract Submitted

A phase change memory (PCM) device is provided. The PCM device includes a bottom electrode formed on a substrate, a heater electrode formed on the bottom electrode, the heater electrode having a tapered portion that becomes narrower in a direction away from the substrate. The PCM device also includes an interlayer dielectric (ILD) layer formed on the tapered portion of the heater electrode, the interlayer layer dielectric including an airgap that at least partially surrounds the tapered portion of the heater electrode. The PCM device also includes a phase change layer formed on the heater electrode, and a top electrode formed on the phase change layer.

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