17637456. Display Substrate, Preparation Method Thereof, and Display Apparatus simplified abstract (BOE Technology Group Co., Ltd.)
Contents
- 1 Display Substrate, Preparation Method Thereof, and Display Apparatus
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Display Substrate, Preparation Method Thereof, and Display Apparatus - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing display substrate designs in terms of performance and cost-effectiveness?
- 1.11 What are the specific manufacturing processes involved in creating the display substrate described in the patent application?
- 1.12 Original Abstract Submitted
Display Substrate, Preparation Method Thereof, and Display Apparatus
Organization Name
BOE Technology Group Co., Ltd.
Inventor(s)
Display Substrate, Preparation Method Thereof, and Display Apparatus - A simplified explanation of the abstract
This abstract first appeared for US patent application 17637456 titled 'Display Substrate, Preparation Method Thereof, and Display Apparatus
Simplified Explanation
The display substrate described in the patent application includes multiple layers stacked on a substrate, including semi-conductive layers, conductive layers, an interlayer insulating layer, and an organic layer. The layers are specifically designed for use in polysilicon and oxide transistors.
- First semi-conductive layer: Contains the active layer of a polysilicon transistor.
- First conductive layer: Includes the gate electrode of a polysilicon transistor and the first electrode plate of a storage capacitor.
- Second conductive layer: Contains the second electrode plate of a storage capacitor.
- Second semi-conductive layer: Includes the active layer of an oxide transistor.
- Third conductive layer: Contains the gate electrode of an oxide transistor.
Potential Applications
The technology described in the patent application could be used in the manufacturing of advanced display panels for electronic devices such as smartphones, tablets, and televisions.
Problems Solved
This technology solves the problem of improving the performance and efficiency of display substrates used in electronic devices by incorporating specific layers for polysilicon and oxide transistors.
Benefits
The benefits of this technology include enhanced display quality, increased energy efficiency, and improved overall performance of electronic devices utilizing the display substrate.
Potential Commercial Applications
The technology could be commercialized by display panel manufacturers looking to enhance the quality and efficiency of their products for consumer electronics markets.
Possible Prior Art
One possible prior art for this technology could be the use of similar layer structures in display substrates for electronic devices, but with different materials or configurations.
Unanswered Questions
How does this technology compare to existing display substrate designs in terms of performance and cost-effectiveness?
The article does not provide a direct comparison with existing display substrate designs in terms of performance and cost-effectiveness.
What are the specific manufacturing processes involved in creating the display substrate described in the patent application?
The article does not detail the specific manufacturing processes involved in creating the display substrate described in the patent application.
Original Abstract Submitted
Provided are a display substrate, a preparation method thereof and a display apparatus. The display substrate includes a first semi-conductive layer, a first conductive layer, a second conductive layer, a second semi-conductive layer, a third conductive layer, an interlayer insulating layer and an organic layer stacked on a substrate. The first semi-conductive layer includes an active layer of a polysilicon transistor, the first conductive layer includes a gate electrode of a polysilicon transistor and a first electrode plate of a storage capacitor, the second conductive layer includes a second electrode plate of a storage capacitor, the second semi-conductive layer includes an active layer of an oxide transistor, and the third conductive layer includes a gate electrode of an oxide transistor.
