17590717. METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF SEPARATING SUBSTRATE simplified abstract (Samsung Electronics Co., Ltd.)

METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF SEPARATING SUBSTRATE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Cheonil Park of Seongnam-si (KR)

WONKEUN Kim of Hwaseong-si (KR)

MYOUNGCHUL Eum of Asan-si (KR)

METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF SEPARATING SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17590717 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF SEPARATING SUBSTRATE

Simplified Explanation

The patent application describes methods for fabricating semiconductor devices and separating substrates. Here is a simplified explanation of the abstract:

• A release layer is placed between a carrier substrate and a device substrate to attach them together.
• The carrier substrate is irradiated with ultraviolet rays, causing it to separate from the release layer.
• This exposes one surface of the release layer.
• A cleaning process is performed on this surface to expose the first surface of the device substrate.
• The release layer consists of an aromatic polymerization unit and a siloxane polymerization unit.

Potential applications of this technology:

• Fabrication of semiconductor devices, such as integrated circuits and microchips.
• Separation of substrates in various industries, including electronics and optoelectronics.

Problems solved by this technology:

• Provides a method for separating substrates without damaging the device substrate.
• Allows for precise and controlled separation of substrates.
• Reduces the risk of contamination during the separation process.

Benefits of this technology:

• Enables efficient fabrication of semiconductor devices.
• Improves the yield and quality of fabricated devices.
• Reduces the cost and complexity of substrate separation processes.
• Enhances the overall performance and reliability of semiconductor devices.

Original Abstract Submitted

Disclosed are methods of fabricating semiconductor devices and methods of separating substrates. The semiconductor device fabricating method comprises providing a release layer between a carrier substrate and a first surface of a device substrate to attach the device substrate to the carrier substrate, irradiating the carrier substrate with an ultraviolet ray to separate the carrier substrate from the release layer and to expose one surface of the release layer, and performing a cleaning process on the one surface of the release layer to expose the first surface of the device substrate. The release layer includes an aromatic polymerization unit and a siloxane polymerization unit.