17589575. METHOD OF OVERLAY MEASUREMENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
METHOD OF OVERLAY MEASUREMENT
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Shih-Yu Chang of Yunlin County (TW)
Chien-Han Chen of Nantou County (TW)
Chien-Chih Chiu of Tainan City (TW)
Chi-Che Tseng of Taoyuan City (TW)
METHOD OF OVERLAY MEASUREMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17589575 titled 'METHOD OF OVERLAY MEASUREMENT
Simplified Explanation
The patent application describes a method for depositing a layer of inter-metal dielectric (IMD) over a conductive line in a semiconductor device. The method involves forming a via opening directly over the conductive line, with the width of the conductive line being larger than the width of the via opening. An overlay measurement is then performed using a backscattered electron image to determine the alignment between the via opening and the conductive line.
- The method involves depositing an IMD layer over a conductive line in a semiconductor device.
- A via opening is formed directly over the conductive line.
- The width of the conductive line is larger than the width of the via opening.
- An overlay measurement is performed using a backscattered electron image.
- The overlay measurement determines the alignment between the via opening and the conductive line.
Potential Applications
- This technology can be applied in the manufacturing of semiconductor devices.
- It can be used in the fabrication of integrated circuits and other electronic components.
Problems Solved
- The method solves the problem of accurately aligning via openings with conductive lines in semiconductor devices.
- It provides a reliable and efficient way to measure the overlay between the via opening and the conductive line.
Benefits
- The method allows for precise alignment of via openings, ensuring proper electrical connections in semiconductor devices.
- It improves the overall quality and performance of integrated circuits and electronic components.
- The use of backscattered electron imaging provides a reliable and accurate measurement technique.
Original Abstract Submitted
A method includes depositing an inter-metal dielectric (IMD) layer over a conductive line. A via opening is formed in the IMD layer and directly over the conductive line. A width of the conductive line is greater than a width of the via opening. An overlay measurement is performed. The overlay measurement includes obtaining a backscattered electron image of the via opening and the conductive line and determining an overlay between the via opening and the conductive line according to the backscattered electron image.