17587805. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Han-Yu Tsai of Hsinchu City (TW)
You-Ting Lin of Miaoli County (TW)
Chih-Chung Chang of Mingjian Township (TW)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17587805 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device. Here are the key points:
- The method involves forming a fin structure, which includes layers of different semiconductors, over a bottom fin structure and a hard mask layer.
- An isolation insulating layer is then formed, exposing the hard mask layer and the stacked layer.
- A sacrificial cladding layer is formed over the exposed hard mask layer and stacked layer.
- Layers of a first dielectric layer and an insertion layer are formed over the sacrificial cladding layer and the fin structure.
- An annealing operation is performed to convert a portion of the first dielectric layer and the insertion layer from an amorphous form to a crystalline form.
- The remaining amorphous portion of the first dielectric layer and the insertion layer is removed, resulting in the formation of a recess.
Potential applications of this technology:
- Manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems solved by this technology:
- The method allows for the precise formation of a recess in the semiconductor device, which can be useful for various device structures and functionalities.
- It provides a way to convert amorphous layers to crystalline form, which can enhance the performance and reliability of the semiconductor device.
Benefits of this technology:
- Improved control and precision in the manufacturing process of semiconductor devices.
- Enhanced performance and reliability of the devices.
- Potential for the development of more advanced and efficient electronic devices.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a fin structure including a stacked layer of first semiconductor layers and second semiconductor layers disposed over a bottom fin structure and a hard mask layer over the stacked layer, forming an isolation insulating layer so that the hard mask layer and the stacked layer are exposed from the isolation insulating layer, forming a sacrificial cladding layer over at least sidewalls of the exposed hard mask layer and stacked layer, forming layers of a first dielectric layer and an insertion layer over the sacrificial cladding layer and the fin structure, performing an annealing operation to convert a portion of the layers of the first dielectric layer and the insertion layer from an amorphous form to a crystalline form, and removing the remaining amorphous portion of the layers of the first dielectric layer and the insertion layer to form a recess.
