17587605. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Ching-Hung Kao of Tainan City (TW)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17587605 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a method of manufacturing a semiconductor device. Here is a simplified explanation of the abstract:

• Conductive layers are formed over a substrate.
• A photoresist layer is formed over the conductive layers.
• The conductive layers are etched using the photoresist layer as a mask, creating an island pattern separated from a bus bar pattern by a groove.
• A connection pattern is formed to connect the island pattern and the bus bar pattern.
• A second photoresist layer is formed, including an opening over the island pattern.
• Second conductive layers are formed on the island pattern in the opening.
• The second photoresist layer and the connection pattern are removed, resulting in a bump structure.

Potential applications of this technology:

• Manufacturing of semiconductor devices such as integrated circuits and microprocessors.
• Production of electronic components used in various devices like smartphones, computers, and automotive systems.

Problems solved by this technology:

• Provides a method for forming a bump structure in a semiconductor device.
• Enables the connection of different conductive layers in a precise and efficient manner.

Benefits of this technology:

• Allows for the creation of complex circuit patterns with improved accuracy.
• Enhances the performance and functionality of semiconductor devices.
• Increases the reliability and durability of electronic components.

Original Abstract Submitted

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.