17581251. SEAL RING STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEAL RING STRUCTURES
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
SEAL RING STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17581251 titled 'SEAL RING STRUCTURES
Simplified Explanation
The abstract describes a patent application for integrated circuit (IC) chips and seal ring structures. The IC chip includes a substrate and a first interconnect layer, which consists of a first device region and a first ring region surrounding it. The first ring region has two walls, with the first wall fully surrounding the first device region and the second wall surrounding both the first device region and the first wall. The first and second walls are separated by a first intermetal dielectric layer and at least one first dummy metal line along the edge of the first device region. The first wall is only separated from the second wall by the first intermetal dielectric layer around a corner of the first device region.
- The patent application is for IC chips and seal ring structures.
- The IC chip includes a substrate and a first interconnect layer.
- The first interconnect layer consists of a first device region and a first ring region.
- The first ring region has two walls: the first wall surrounds the first device region, and the second wall surrounds both the first device region and the first wall.
- The first and second walls are separated by a first intermetal dielectric layer and at least one first dummy metal line along the edge of the first device region.
- The first wall is only separated from the second wall by the first intermetal dielectric layer around a corner of the first device region.
Potential Applications
- Integrated circuit manufacturing
- Semiconductor industry
- Electronics manufacturing
Problems Solved
- Provides a structure for IC chips and seal ring structures that improves performance and reliability.
- Addresses issues related to interconnect layers and device regions in IC chips.
Benefits
- Enhanced performance and reliability of IC chips.
- Improved manufacturing processes for integrated circuits.
- Increased efficiency in the semiconductor industry.
Original Abstract Submitted
Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a substrate and a first interconnect layer over the substrate. The first interconnect layer includes a first device region and a first ring region surrounding the first device region. The first ring region includes a first wall fully surrounding the first device region and a second wall fully surrounding the first device region and the first wall. The first wall is spaced apart from the second wall by a first intermetal dielectric layer and at least one first dummy metal line along an edge of the first device region. The first wall is spaced apart from the second wall only by the first intermetal dielectric layer around a corner of the first device region.
