17577707. Semiconductor Devices with a Nitrided Capping Layer simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

Semiconductor Devices with a Nitrided Capping Layer

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Po-Chin Chang of Taichung City (TW)

Lin-Yu Huang of Hsinchu City (TW)

Shuen-Shin Liang of Hsinchu City (TW)

Sheng-Tsung Wang of Hsinchu City (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Chia-Hung Chu of Taipei City (TW)

Tzu Pei Chen of Hsinchu City (TW)

Yuting Cheng of Hsinchu City (TW)

Sung-Li Wang of Zhubei City (TW)

Semiconductor Devices with a Nitrided Capping Layer - A simplified explanation of the abstract

This abstract first appeared for US patent application 17577707 titled 'Semiconductor Devices with a Nitrided Capping Layer

Simplified Explanation

The present disclosure describes a semiconductor device with a nitrided capping layer and methods for forming the same.

• A first conductive structure is formed in a first dielectric layer on a substrate.
• A second dielectric layer is deposited on the first conductive structure and the first dielectric layer.
• An opening is formed in the second dielectric layer to expose the first conductive structure and a portion of the first dielectric layer.
• A nitrided layer is formed on the top portion of the first conductive structure, a top portion of the portion of the first dielectric layer, sidewalls of the opening, and a top portion of the second dielectric layer.
• A second conductive structure is formed in the opening, where the second conductive structure is in contact with the nitrided layer.

Potential Applications

This technology can be applied in various semiconductor devices, such as integrated circuits and microprocessors.

Problems Solved

The nitrided capping layer helps improve the performance and reliability of the semiconductor device by reducing leakage current and improving thermal stability.

Benefits

• Improved performance and reliability of semiconductor devices.
• Reduced leakage current.
• Enhanced thermal stability.

Original Abstract Submitted

The present disclosure describes a semiconductor device with a nitrided capping layer and methods for forming the same. One method includes forming a first conductive structure in a first dielectric layer on a substrate, depositing a second dielectric layer on the first conductive structure and the first dielectric layer, and forming an opening in the second dielectric layer to expose the first conductive structure and a portion of the first dielectric layer. The method further includes forming a nitrided layer on a top portion of the first conductive structure, a top portion of the portion of the first dielectric layer, sidewalls of the opening, and a top portion of the second dielectric layer, and forming a second conductive structure in the opening, where the second conductive structure is in contact with the nitrided layer.