17576726. SEMICONDUCTOR DEVICE HAVING HYBRID CHANNEL STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE HAVING HYBRID CHANNEL STRUCTURE
Organization Name
Inventor(s)
Kang-ill Seo of Albany NY (US)
Sooyoung Park of Clifton Park NY (US)
Byounghak Hong of Albany NY (US)
SEMICONDUCTOR DEVICE HAVING HYBRID CHANNEL STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17576726 titled 'SEMICONDUCTOR DEVICE HAVING HYBRID CHANNEL STRUCTURE
Simplified Explanation
The patent application describes a semiconductor device that includes a hybrid channel structure formed on a substrate. The hybrid channel structure consists of at least one 1channel structure extended in 1and 2directions parallel to the substrate's upper surface, and a 2channel structure connected to and intersecting the 1channel structure in a 3direction. The device also includes a gate structure surrounding the hybrid channel structure, and source/drain regions formed at the ends of the hybrid channel structure in the 1direction.
- The semiconductor device includes a hybrid channel structure with both 1channel and 2channel structures.
- The 1channel structure is extended in 1and 2directions parallel to the substrate's upper surface.
- The 2channel structure is connected to and intersects the 1channel structure in a 3direction.
- The device has a gate structure surrounding the hybrid channel structure.
- Source/drain regions are formed at the ends of the hybrid channel structure in the 1direction.
Potential Applications
- This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be utilized in the manufacturing of integrated circuits and microprocessors.
Problems Solved
- The hybrid channel structure allows for improved performance and efficiency of the semiconductor device.
- The 1channel and 2channel structures provide enhanced conductivity and better control of electrical current flow.
- The gate structure surrounding the hybrid channel structure helps in controlling the device's operation.
Benefits
- The hybrid channel structure offers increased speed and performance of the semiconductor device.
- The improved conductivity and control of electrical current flow result in reduced power consumption.
- The gate structure enhances the device's functionality and reliability.
Original Abstract Submitted
A semiconductor device includes: a substrate; at least one hybrid channel structure formed on the substrate and including at least one 1channel structure extended in 1and 2directions in parallel with an upper surface of the substrate without directly contacting the substrate, and a 2channel structure connected to and intersecting the at least one 1channel structure in a 3direction perpendicular to the 1or 2direction; a gate structure surrounding the hybrid channel structure; and source/drain regions respectively formed at two opposite ends of the at least one hybrid channel structure in the 1direction.
