17576007. INTEGRATED CIRCUIT DEVICES INCLUDING A POWER RAIL AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
INTEGRATED CIRCUIT DEVICES INCLUDING A POWER RAIL AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
GILHWAN Son of Clifton Park NY (US)
HOONSEOK Seo of Niskayuna NY (US)
SAEHAN Park of Clifton Park NY (US)
BYOUNGHAK Hong of Albany NY (US)
KANG-ILL Seo of Springfield VA (US)
INTEGRATED CIRCUIT DEVICES INCLUDING A POWER RAIL AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17576007 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING A POWER RAIL AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a method for forming integrated circuit devices, specifically focusing on the formation of a transistor and a power rail on a substrate. Here is a simplified explanation of the abstract:
- A transistor is formed on the first surface of a substrate, consisting of an active region, a source/drain region, and a gate electrode.
- A conductive wire is created, which is connected to the source/drain region of the transistor.
- A trench is formed by etching the second surface of the substrate, which is opposite to the first surface.
- A power rail is then formed within the trench, and it is electrically connected to the conductive wire.
Potential Applications:
- This method can be used in the manufacturing of integrated circuit devices, such as microprocessors, memory chips, and other electronic components.
- It can be applied in various industries that rely on integrated circuits, including telecommunications, consumer electronics, automotive, and aerospace.
Problems Solved:
- The method provides a reliable and efficient way to form a transistor and a power rail on a substrate, ensuring proper electrical connections.
- It addresses the challenge of integrating different components within an integrated circuit device, improving overall functionality and performance.
Benefits:
- The method allows for the creation of compact and high-performance integrated circuit devices.
- It enhances the electrical connectivity between the transistor, conductive wire, and power rail, leading to improved functionality and reliability.
- The technique offers a cost-effective and scalable solution for manufacturing integrated circuit devices.
Original Abstract Submitted
Methods of forming an integrated circuit devices may include forming a transistor on a first surface of a substrate. The transistor may include an active region, a source/drain region contacting the active region and a gate electrode on the active region. The methods may also include forming a conductive wire that is electrically connected to the source/drain region, forming a trench extending through the substrate by etching a second surface of the substrate, which is opposite the first surface of the substrate, and forming a power rail in the trench. The power rail is electrically connected to conductive wire.
