17575145. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Ting-Yeh Chen of Hsinchu City (TW)

Wei-Yang Lee of Taipei City (TW)

Chia-Pin Lin of Xinpu Township (TW)

Yuan-Ching Peng of Hsinchu` (TW)

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17575145 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a method of manufacturing a semiconductor device using a fin structure. Here are the key points:

  • A fin structure is formed by stacking layers of different semiconductor materials over a bottom fin structure and covering them with a hard mask layer.
  • An isolation insulating layer is formed to separate the fin structure from other components.
  • A sacrificial cladding layer is applied to the sidewalls of the hard mask layer and stacked layers.
  • A first dielectric layer is added, followed by a second dielectric layer that is recessed.
  • A third dielectric layer is formed on the recessed second dielectric layer and partially removed to create a trench.
  • The trench is filled with a dielectric material to form a wall fin structure.

Potential applications of this technology:

  • Manufacturing of advanced semiconductor devices such as transistors and integrated circuits.
  • Production of high-performance electronic devices with improved power efficiency and speed.

Problems solved by this technology:

  • Enables the creation of a fin structure, which is crucial for the operation of modern semiconductor devices.
  • Provides a method for isolating the fin structure from other components, ensuring proper functionality and preventing interference.

Benefits of this technology:

  • Allows for the fabrication of smaller and more efficient semiconductor devices.
  • Enhances the performance and reliability of electronic devices.
  • Enables the development of advanced technologies in fields like computing, telecommunications, and consumer electronics.


Original Abstract Submitted

In a method of manufacturing a semiconductor device, a fin structure, which includes a stacked layer of first semiconductor layers and second semiconductor layers disposed over a bottom fin structure and a hard mask layer over the stacked layer, is formed. An isolation insulating layer is formed. A sacrificial cladding layer is formed over at least sidewalls of the exposed hard mask layer and stacked layer. A first dielectric layer is formed. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer is recessed. A third dielectric layer is formed on the recessed second dielectric layer. The third dielectric layer is partially removed to form a trench. A fourth dielectric layer is formed by filling the trench with a dielectric material, thereby forming a wall fin structure.

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