17570066. DOPED SEMICONDUCTOR STRUCTURE FOR NIR SENSORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

DOPED SEMICONDUCTOR STRUCTURE FOR NIR SENSORS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Po-Chun Liu of Hsinchu City (TW)

Eugene I-Chun Chen of Taipei City (TW)

DOPED SEMICONDUCTOR STRUCTURE FOR NIR SENSORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17570066 titled 'DOPED SEMICONDUCTOR STRUCTURE FOR NIR SENSORS

Simplified Explanation

The present disclosure describes a method of forming an integrated chip structure. The method involves etching a base substrate to create a recess, and then forming a doped epitaxial layer along the interior surfaces of the recess. An epitaxial material is then formed on the horizontal and vertical surfaces of the doped epitaxial layer. Within this epitaxial material, two doped photodiode regions are formed, each with a different doping type.

• Etch a base substrate to create a recess
• Form a doped epitaxial layer along the interior surfaces of the recess
• Form an epitaxial material on the horizontal and vertical surfaces of the doped epitaxial layer
• Create a first doped photodiode region within the epitaxial material
• Create a second doped photodiode region within the epitaxial material, with a different doping type

Potential applications of this technology:

• Integrated chip manufacturing
• Photodiode fabrication

Problems solved by this technology:

• Simplified method for forming an integrated chip structure
• Efficient formation of doped photodiode regions

Benefits of this technology:

• Simplified manufacturing process
• Improved efficiency in photodiode fabrication

Original Abstract Submitted

The present disclosure relates a method of forming an integrated chip structure. The method includes etching a base substrate to form a recess defined by one or more interior surfaces of the base substrate. A doped epitaxial layer is formed along the one or more interior surfaces of the base substrate, and an epitaxial material is formed on horizontally and vertically extending surfaces of the doped epitaxial layer. A first doped photodiode region is formed within the epitaxial material and a second doped photodiode region is formed within the epitaxial material. The first doped photodiode region has a first doping type and the second doped photodiode region has a second doping type.