17569279. CAPACITOR DEVICE WITH MULTI-LAYER DIELECTRIC STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
CAPACITOR DEVICE WITH MULTI-LAYER DIELECTRIC STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsiang-Ku Shen of Hsinchu City (TW)
Cheng-Hao Hou of Hsinchu City (TW)
Chen-Chiu Huang of Taichung City (TW)
CAPACITOR DEVICE WITH MULTI-LAYER DIELECTRIC STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17569279 titled 'CAPACITOR DEVICE WITH MULTI-LAYER DIELECTRIC STRUCTURE
Simplified Explanation
The patent application describes a semiconductor device structure that includes multiple insulating layers and a capacitor device embedded within them. The capacitor device consists of two capacitor electrode layers separated by a capacitor insulating stack, which is made up of alternating layers with different dielectric constants.
- The semiconductor device structure includes a first insulating layer formed over a semiconductor substrate.
- An interconnect structure is formed within the first insulating layer.
- A second insulating layer is formed over the first insulating layer.
- A capacitor device is embedded within the second insulating layer.
- The capacitor device consists of a first capacitor electrode layer, a capacitor insulating stack, and a second capacitor electrode layer.
- The capacitor insulating stack is composed of alternating layers with different dielectric constants.
Potential applications of this technology:
- Integrated circuits and microchips
- Memory devices
- Power electronics
- Communication devices
Problems solved by this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced capacitance and charge storage capabilities
- Reduction of signal interference and noise
Benefits of this technology:
- Higher integration density and miniaturization of semiconductor devices
- Increased storage capacity and processing speed
- Improved reliability and stability of electronic systems
Original Abstract Submitted
Structures of a semiconductor device structure are provided. The semiconductor device structure includes a first insulating layer formed over a semiconductor substrate and an interconnect structure formed in the first insulating layer. The semiconductor device structure also includes a second insulating layer formed over the first insulating layer and a capacitor device embedded in the second insulating layer. The capacitor device includes a first capacitor electrode layer electrically connected to the interconnect structure, a capacitor insulating stack formed over the first capacitor electrode layer and a second capacitor electrode layer formed over the capacitor insulating stack. The capacitor insulating stack includes first layers alternatingly stacked with second layers. The dielectric constant of the first layer is different than the dielectric constant of the second layer.
