17568176. CRITICAL DIMENSION UNIFORMITY (CDU) CONTROL METHOD AND SEMICONDUCTOR SUBSTRATE PROCESSING SYSTEM simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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CRITICAL DIMENSION UNIFORMITY (CDU) CONTROL METHOD AND SEMICONDUCTOR SUBSTRATE PROCESSING SYSTEM

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Hsin-Chih Wang of Zhubei City (TW)

Yu-Tien Shen of Tainan City (TW)

Yu-Tse Lai of Zhubei City (TW)

Chih-Kai Yang of Taipei City (TW)

Hsiang-Ming Chang of Hsinchu City (TW)

Chun-Yen Chang of Hsinchu City (TW)

Ya-Hui Chang of Hsinchu City (TW)

CRITICAL DIMENSION UNIFORMITY (CDU) CONTROL METHOD AND SEMICONDUCTOR SUBSTRATE PROCESSING SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 17568176 titled 'CRITICAL DIMENSION UNIFORMITY (CDU) CONTROL METHOD AND SEMICONDUCTOR SUBSTRATE PROCESSING SYSTEM

Simplified Explanation

The abstract describes a method for controlling the uniformity of critical dimensions in semiconductor wafer processing. The method involves gathering data on the critical dimension uniformity (CDU) of a wafer after it has undergone a surface process. Based on this data, a calibration process is determined to correct for various deviations. The calibration process includes steps for correcting reticle-dependent deviation, time-dependent deviation, and process-dependent deviation. The surface process is then calibrated using this calibration process to achieve a different surface process.

  • The method involves gathering CDU data from a wafer after a surface process.
  • A calibration process is determined based on the CDU data.
  • The calibration process includes steps for correcting reticle-dependent, time-dependent, and process-dependent deviations.
  • The surface process is calibrated using the calibration process to achieve a different surface process.

Potential Applications

  • Semiconductor manufacturing
  • Wafer processing

Problems Solved

  • Inconsistent critical dimension uniformity in wafer processing
  • Deviations caused by reticle, time, and process variations

Benefits

  • Improved control over critical dimension uniformity
  • Enhanced accuracy and precision in wafer processing
  • Ability to achieve different surface processes based on calibration


Original Abstract Submitted

A critical dimension uniformity control method is provided. The method includes gathering a first CDU by a first critical dimension from a first wafer after being processed by a first surface process. The method includes determining a first calibration process based on the first CDU. The determining includes an intra dose correction step for correcting reticle-dependent deviation, a thru-slit dose sensitivity correction step for correcting time-dependent deviation, and an inter dose correction step for correcting process-dependent deviation. The method includes calibrating the first surface process by the first calibration process to determine a second surface process different from the first surface process.

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