View source for 17564889. INTEGRATED SENSING AND DISPLAY SYSTEM simplified abstract (Meta Platforms Technologies, LLC)

=INTEGRATED SENSING AND DISPLAY SYSTEM=


==Organization Name==

[[:Category:Meta Platforms Technologies, LLC|Meta Platforms Technologies, LLC]]


[[Category:Meta Platforms Technologies, LLC]]

==Inventor(s)==

[[:Category:Andrew Samuel Berkovich of Bellevue WA (US)|Andrew Samuel Berkovich of Bellevue WA (US)]][[Category:Andrew Samuel Berkovich of Bellevue WA (US)]]

[[:Category:Warren Andrew Hunt of Woodinville WA (US)|Warren Andrew Hunt of Woodinville WA (US)]][[Category:Warren Andrew Hunt of Woodinville WA (US)]]

[[:Category:Daniel Morgan of Seattle WA (US)|Daniel Morgan of Seattle WA (US)]][[Category:Daniel Morgan of Seattle WA (US)]]

[[:Category:Shlomo Alkalay of Redmond WA (US)|Shlomo Alkalay of Redmond WA (US)]][[Category:Shlomo Alkalay of Redmond WA (US)]]

[[:Category:Jack Thomas Lavier of Sammamish WA (US)|Jack Thomas Lavier of Sammamish WA (US)]][[Category:Jack Thomas Lavier of Sammamish WA (US)]]

==INTEGRATED SENSING AND DISPLAY SYSTEM - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17564889 titled 'INTEGRATED SENSING AND DISPLAY SYSTEM

==Simplified Explanation==

The patent application describes an apparatus for integrating sensing and display systems using multiple semiconductor layers enclosed in a semiconductor package.

* The apparatus includes a first semiconductor layer with an image sensor, a second semiconductor layer with a display, and a third semiconductor layer with compute circuits supporting image sensing and display operations.
* The semiconductor package encloses the three layers and includes openings to expose the image sensor and display.
* The layers form a stack structure along an axis, with the third layer sandwiched between the first and second layers.

== Potential Applications ==
This technology could be applied in:
* Smartphones and tablets for improved camera and display integration.
* Augmented reality devices for seamless image capture and display.

== Problems Solved ==
This technology solves the problem of integrating image sensing and display functions in a compact and efficient manner.

== Benefits ==
* Reduced size and weight of devices.
* Improved performance and efficiency of image sensing and display operations.

== Potential Commercial Applications ==
* Consumer electronics industry for mobile devices.
* Medical imaging devices for enhanced diagnostic capabilities.

== Possible Prior Art ==
One possible prior art could be the integration of image sensors and displays in smartphones and tablets, but the specific configuration described in the patent application may be novel.

=== Unanswered Questions ===

=== How does this technology impact power consumption in devices? ===
This article does not provide information on the power consumption implications of integrating sensing and display systems in the described apparatus.

=== What are the potential challenges in manufacturing this integrated semiconductor package? ===
The article does not address the potential manufacturing challenges that may arise in producing the integrated sensing and display system described in the patent application.


==Original Abstract Submitted==

In one example, an apparatus for integrating sensing and display system includes a first semiconductor layer that includes an image sensor; a second semiconductor layer that includes a display; a third semiconductor layer that includes compute circuits configured to support an image sensing operation by the image sensor and a display operation by the display; and a semiconductor package that encloses the first, second, and third semiconductor layers, the semiconductor package further including a first opening to expose the image sensor and a second opening to expose the display. The first, second, and third semiconductor layers form a first stack structure along a first axis. The third semiconductor layer is sandwiched between the first semiconductor layer and the second semiconductor layer in the first stack structure.



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