17551675. LOCAL INTERCONNECTS HAVING DIFFERENT MATERIAL COMPOSITIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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LOCAL INTERCONNECTS HAVING DIFFERENT MATERIAL COMPOSITIONS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Chih-Chao Yang of Glenmont NY (US)

Daniel Charles Edelstein of White Plains NY (US)

Theodorus E. Standaert of Clifton Park NY (US)

Jon Slaughter of Slingerlands NY (US)

LOCAL INTERCONNECTS HAVING DIFFERENT MATERIAL COMPOSITIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17551675 titled 'LOCAL INTERCONNECTS HAVING DIFFERENT MATERIAL COMPOSITIONS

Simplified Explanation

The abstract describes a semiconductor device and its formation. The device includes two bottom interconnects, one in the logic area and the other in the memory area, both formed within a dielectric layer. On top of the second bottom interconnect in the memory area, a memory device is formed. The first bottom interconnect in the logic area is made of a different metal material than the second bottom interconnect in the memory area.

  • The semiconductor device has a first bottom interconnect in the logic area and a second bottom interconnect in the memory area.
  • Both bottom interconnects are formed within a dielectric layer.
  • A memory device is formed on top of the second bottom interconnect in the memory area.
  • The first bottom interconnect in the logic area is made of a different metal material than the second bottom interconnect in the memory area.

Potential Applications

  • This technology can be used in various semiconductor devices, such as microprocessors, memory chips, and integrated circuits.
  • It can improve the performance and efficiency of these devices by using different metal materials for different areas.

Problems Solved

  • By using different metal materials for the bottom interconnects in different areas, potential issues related to compatibility and performance can be addressed.
  • This technology allows for optimized design and performance in both the logic and memory areas of a semiconductor device.

Benefits

  • The use of different metal materials for the bottom interconnects allows for better performance and efficiency in both the logic and memory areas.
  • It provides flexibility in the design and manufacturing process of semiconductor devices.
  • This technology can lead to improved functionality and reliability of semiconductor devices.


Original Abstract Submitted

A semiconductor device and formation thereof. The semiconductor device including: a first bottom interconnect formed within a first dielectric layer and located within a logic area of the semiconductor device; a second bottom interconnect formed within the first dielectric layer and located within a memory area of the semiconductor device; and a memory device formed on top of the second bottom interconnect located within the memory area of the semiconductor device, wherein: a first metal material used to form the first bottom interconnect located in the logic area is different than a second metal material used to form the second bottom interconnect located in the memory area.

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