17548773. DUAL-METAL ULTRA THICK METAL (UTM) STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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DUAL-METAL ULTRA THICK METAL (UTM) STRUCTURE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Hsueh-Chung Chen of Cohoes NY (US)

Yann Mignot of Slingerlands NY (US)

Chi-Chun Liu of Altamont NY (US)

Mary Claire Silvestre of Clifton Park NY (US)

Jennifer Oakley of Cohoes NY (US)

DUAL-METAL ULTRA THICK METAL (UTM) STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17548773 titled 'DUAL-METAL ULTRA THICK METAL (UTM) STRUCTURE

Simplified Explanation

Abstract: A semiconductor device has been developed that includes a conductive line, a metal layer, and a metallization layer. The conductive line is made of copper (Cu) and is surrounded by a dielectric layer. The metal layer, made of ruthenium (Ru), is in direct contact with the conductive line and acts as an interface between the conductive line and the metallization layer.

Patent/Innovation Explanation:

  • The semiconductor device includes a conductive line, metal layer, and metallization layer.
  • The conductive line is made of copper (Cu) and is surrounded by a dielectric layer.
  • The metal layer, made of ruthenium (Ru), is in direct contact with the conductive line.
  • The metal layer acts as an interface between the conductive line and the metallization layer.
  • The metal layer is divided into an upper section and a lower section.

Potential Applications:

  • This technology can be used in the manufacturing of various semiconductor devices.
  • It can be applied in the production of integrated circuits, microprocessors, and memory chips.
  • The semiconductor devices utilizing this technology can be used in electronic devices such as smartphones, computers, and tablets.

Problems Solved:

  • The technology solves the problem of interface compatibility between the conductive line and the metallization layer.
  • It addresses the challenge of ensuring a reliable and efficient connection between different layers in a semiconductor device.
  • The use of ruthenium as the metal layer helps to overcome issues related to interfacial resistance and electromigration.

Benefits of this Technology:

  • The technology provides a reliable and efficient interface between the conductive line and the metallization layer.
  • It improves the overall performance and reliability of semiconductor devices.
  • The use of ruthenium as the metal layer enhances the electrical conductivity and durability of the device.
  • This technology enables the production of smaller and more advanced semiconductor devices.


Original Abstract Submitted

A semiconductor device includes a conductive line disposed within a dielectric layer, a metal layer disposed over and in direct contact with the conductive line, and a metallization layer disposed over the metal layer such that a protruding segment of the metal layer acts as an interface between the conductive line and the metallization layer. The conductive line is copper (Cu) and the metal layer is ruthenium (Ru). The Ru metal layer includes an upper metal layer section and a lower metal layer section.

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