17547669. DOPANT-FREE INHIBITOR FOR AREA SELECTIVE DEPOSITIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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DOPANT-FREE INHIBITOR FOR AREA SELECTIVE DEPOSITIONS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

PRASAD Bhosale of Albany NY (US)

Alexander Edward Hess of Redwood Estates CA (US)

SON Nguyen of Schenectady NY (US)

Rudy J. Wojtecki of San Jose CA (US)

DOPANT-FREE INHIBITOR FOR AREA SELECTIVE DEPOSITIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17547669 titled 'DOPANT-FREE INHIBITOR FOR AREA SELECTIVE DEPOSITIONS

Simplified Explanation

The patent application describes a method for creating a fully-aligned via (FAV) structure. This involves arranging conductive material next to a dielectric pad and chemically deactivating the surface of the conductive material by forming a dopant-free surface-aligned monolayer (SAM) on it. Dielectric material is then deposited onto the dielectric pad, and the dopant-free SAM is removed from the surface of the conductive material.

  • Conductive material is placed next to a dielectric pad.
  • A dopant-free surface-aligned monolayer (SAM) is formed on the surface of the conductive material, chemically deactivating it.
  • Dielectric material is deposited onto the dielectric pad.
  • The dopant-free SAM is removed from the surface of the conductive material.

Potential Applications

  • Semiconductor manufacturing
  • Electronics industry

Problems Solved

  • Ensures proper alignment of vias in electronic devices
  • Improves the reliability and performance of electronic components

Benefits

  • Enhanced precision and accuracy in via formation
  • Increased efficiency in semiconductor manufacturing
  • Improved functionality and reliability of electronic devices


Original Abstract Submitted

A method of forming a fully-aligned via (FAV) structure is provided. The method includes arranging conductive material adjacent to a dielectric pad and chemically deactivating a surface of the conductive material by forming a dopant-free surface-aligned monolayer (SAM) thereon. Dielectric material is deposited onto the dielectric pad aside the dopant-free SAM and the dopant-free SAM is removed from the surface of the conductive material.

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