17547152. MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Ching-Tzu Chen of Ossining NY (US)
Carl Radens of LaGrangeville NY (US)
MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17547152 titled 'MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE
Simplified Explanation
The abstract describes a phase change memory that includes a phase change structure, a heater, and multiple electrodes. The heater is connected to one surface of the phase change structure, while the electrodes are connected to different surfaces and lateral ends of the structure.
- The patent application describes a phase change memory technology.
- The memory includes a phase change structure, a heater, and multiple electrodes.
- The heater is coupled to one surface of the phase change structure.
- A first electrode is coupled to another surface of the phase change structure.
- A second electrode is coupled to the heater.
- A third electrode is connected to one lateral end of the phase change structure.
- A fourth electrode is connected to the other lateral end of the phase change structure.
Potential applications of this technology:
- Non-volatile memory devices
- High-density storage devices
- Data storage in electronic devices
- Solid-state drives (SSDs)
- Embedded systems
Problems solved by this technology:
- Limited storage capacity in traditional memory devices
- Slow read and write speeds in conventional memory technologies
- High power consumption in certain memory devices
- Limited durability and reliability of memory devices
Benefits of this technology:
- Increased storage capacity
- Faster read and write speeds
- Lower power consumption
- Improved durability and reliability
Original Abstract Submitted
A phase change memory includes a phase change structure. There is a heater coupled to a first surface of the phase change structure. A first electrode is coupled to a second surface of the phase change structure. A second electrode coupled to a second surface of the heater. A third electrode is connected to a first lateral end of the phase change structure and a fourth electrode connected to a second lateral end of the phase change structure.
