17545985. VERTICAL TRANSMON STRUCTURE AND ITS FABRICATION PROCESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

From WikiPatents
Jump to navigation Jump to search

VERTICAL TRANSMON STRUCTURE AND ITS FABRICATION PROCESS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Masao Tokunari of Yokohama (JP)

Naoki Kanazawa of Yokohama (JP)

Akihiro Horibe of Yokohama-shi (JP)

Kuniaki Sueoka of Sagamihara-shi (JP)

VERTICAL TRANSMON STRUCTURE AND ITS FABRICATION PROCESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17545985 titled 'VERTICAL TRANSMON STRUCTURE AND ITS FABRICATION PROCESS

Simplified Explanation

The abstract describes a vertical transmon qubit structure, which includes a substrate with two surfaces. A through-silicon-via (TSV) is present in the substrate. A Josephson junction (JJ) is formed by a first electrode located on a portion of the first surface of the substrate, adjacent to the TSV, and a second electrode in contact with the TSV on another portion of the first surface. An insulator separates the first and second electrodes.

  • The patent application describes a new design for a vertical transmon qubit structure.
  • The structure includes a substrate with two surfaces.
  • A through-silicon-via (TSV) is present in the substrate, allowing for vertical connections.
  • A Josephson junction (JJ) is formed by a first electrode on one portion of the substrate surface and a second electrode in contact with the TSV on another portion of the surface.
  • The first and second electrodes are separated by an insulator.

Potential Applications

The potential applications of this technology include:

  • Quantum computing: The vertical transmon qubit structure can be used in quantum computers to perform complex calculations and solve problems that are currently intractable for classical computers.
  • Quantum communication: The structure can be utilized in quantum communication systems to enable secure and efficient transmission of information.

Problems Solved

This technology solves the following problems:

  • Integration: The vertical transmon qubit structure allows for vertical connections through the through-silicon-via (TSV), enabling better integration with other components and systems.
  • Insulation: The insulator between the first and second electrodes of the Josephson junction (JJ) prevents unwanted electrical interactions and ensures proper functioning of the qubit.

Benefits

The benefits of this technology are:

  • Improved performance: The vertical transmon qubit structure provides better performance and reliability compared to traditional designs.
  • Compact design: The vertical structure allows for a more compact and efficient layout, enabling higher qubit density and scalability.
  • Enhanced integration: The through-silicon-via (TSV) enables seamless integration with other components, leading to improved system-level performance.


Original Abstract Submitted

A vertical transmon qubit structure, includes a substrate having a first surface and a second surface. A through-silicon-via (TSV) is located in the substrate. A first electrode of a Josephson junction (JJ) is located on a portion of the first surface of the substrate and adjacent to the TSV. A second electrode of the JJ is in contact with the TSV and on a second portion of the first surface of the substrate. The first electrode is separated from the second electrode by an insulator.

Retrieved from "http://wikipatents.org/index.php?title=17545985._VERTICAL_TRANSMON_STRUCTURE_AND_ITS_FABRICATION_PROCESS_simplified_abstract_(INTERNATIONAL_BUSINESS_MACHINES_CORPORATION)&oldid=25840"