17545207. MONOLITHIC SILICON JOSEPHSON JUNCTIONS FOR SUPERCONDUCTING QUBITS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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MONOLITHIC SILICON JOSEPHSON JUNCTIONS FOR SUPERCONDUCTING QUBITS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Nicholas Torleiv Bronn of Long Island City NY (US)

Thorsten Muehge of Budenheim (DE)

Mark Mattingley-scott of Heidelberg (DE)

MONOLITHIC SILICON JOSEPHSON JUNCTIONS FOR SUPERCONDUCTING QUBITS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17545207 titled 'MONOLITHIC SILICON JOSEPHSON JUNCTIONS FOR SUPERCONDUCTING QUBITS

Simplified Explanation

Abstract: A monolithic silicon Josephson junction can be fabricated from a silicon wafer using semiconductor technologies such as gas immersion laser doping and smart cut technology. Rather than using a superconducting metal for the junction electrodes, silicon that has been highly doped with boron can serve as the superconducting material for the electrodes of the Josephson junction. A region of the silicon wafer that has not been doped serves as the tunnel barrier. Fabrication of the Josephson junction does not require a metallization process since the electrodes and tunnel barrier are formed from highly doped silicon and non-doped silicon, respectively. The single-crystal structure of the resulting Josephson junction yields low two-level system (TLS) noise.

Patent/Innovation:

  • A monolithic silicon Josephson junction can be created using semiconductor technologies.
  • The junction electrodes are made of highly doped silicon instead of superconducting metal.
  • The tunnel barrier is formed by a non-doped region of the silicon wafer.
  • No metallization process is required for fabrication.
  • The resulting Josephson junction has a single-crystal structure, resulting in low two-level system (TLS) noise.

Potential Applications:

  • Superconducting electronics
  • Quantum computing
  • High-speed digital circuits

Problems Solved:

  • Eliminates the need for superconducting metal electrodes in Josephson junctions.
  • Simplifies the fabrication process by using semiconductor technologies.
  • Reduces two-level system (TLS) noise in Josephson junctions.

Benefits:

  • Lower cost and complexity of fabrication compared to traditional Josephson junctions.
  • Improved performance with low two-level system (TLS) noise.
  • Compatibility with existing semiconductor technologies.


Original Abstract Submitted

A monolithic silicon Josephson junction can be fabricated from a silicon wafer using semiconductor technologies such as gas immersion laser doping and smart cut technology. Rather than using a superconducting metal for the junction electrodes, silicon that has been highly doped with boron can serve as the superconducting material for the electrodes of the Josephson junction. A region of the silicon wafer that has not been doped serves as the tunnel barrier. Fabrication of the Josephson junction does not require a metallization process since the electrodes and tunnel barrier are formed from highly doped silicon and non-doped silicon, respectively. The single-crystal structure of the resulting Josephson junction yields low two-level system (TLS) noise.

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