17536939. MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Byounghak Hong of Albany NY (US)

Seungchan Yun of Waterford NY (US)

Kang-ill Seo of Albany NY (US)

MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17536939 titled 'MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE

Simplified Explanation

The patent application describes a multi-stack semiconductor device that includes a nanosheet transistor and a fin field-effect transistor (FinFET) stacked on top of each other.

• The nanosheet transistor consists of multiple nanosheet layers surrounded by a lower gate structure, except between the nanosheet layers.
• The FinFET includes at least one fin structure, with the top and side surfaces surrounded by an upper gate structure.
• Both the lower and upper gate structures include a gate oxide layer formed on the nanosheet layers and the fin structure.
• Additionally, an extra gate (EG) oxide layer is included between the gate oxide layer and the nanosheet layers and/or between the gate oxide layer and the fin structure.

Potential applications of this technology:

• Advanced semiconductor devices for various electronic applications.
• Improved performance and efficiency in integrated circuits.
• Enhanced functionality in nanoscale transistors.

Problems solved by this technology:

• Overcoming limitations of traditional transistor designs.
• Enhancing control and performance of nanoscale transistors.
• Enabling the integration of multiple transistor types in a single device.

Benefits of this technology:

• Higher transistor density and improved performance.
• Reduced power consumption and increased energy efficiency.
• Enhanced functionality and versatility in semiconductor devices.

Original Abstract Submitted

A multi-stack semiconductor device includes: a substrate; a multi-stack transistor formed on the substrate and including a nanosheet transistor and a fin field-effect transistor (FinFET) above the nanosheet transistor, wherein the nanosheet transistor includes a plurality nanosheet layers surrounded by a lower gate structure except between the nanosheet layers, the FinFET includes at least one fin structure, of which at least top and side surfaces are surrounded by an upper gate structure, and each of the lower and upper gate structures includes: a gate oxide layer formed on the nanosheet layers and the at least one fin structure; and a gate metal pattern formed on the gate oxide layer. At least one of the lower and upper gate structures includes an extra gate (EG) oxide layer formed between the gate oxide layer and the nanosheet layers and/or between the gate oxide layer and the at least one fin structure.