17530690. INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE simplified abstract (International Business Machines Corporation)

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INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

Organization Name

International Business Machines Corporation

Inventor(s)

Pouya Hashemi of Purchase NY (US)

Daniel Charles Edelstein of White Plains NY (US)

Andrew Giannetta of Somers NY (US)

INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17530690 titled 'INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

Simplified Explanation

The patent application describes a method of manufacturing a double magnetic tunnel junction device, which includes the following steps:

  • Forming a first magnetic tunnel junction stack
  • Forming a spin conducting layer on top of the first magnetic tunnel junction stack
  • Forming a metallic ring layer on the sides of the spin conducting layer
  • Forming a second magnetic tunnel junction stack on top of the spin conducting layer, with a wider width than the first magnetic tunnel junction stack

Potential applications of this technology:

  • Magnetic random access memory (MRAM) devices
  • Magnetic sensors
  • Magnetic logic devices

Problems solved by this technology:

  • Improves the performance and efficiency of double magnetic tunnel junction devices
  • Enhances the stability and reliability of the device

Benefits of this technology:

  • Higher storage capacity and faster data access in MRAM devices
  • Improved sensitivity and accuracy in magnetic sensors
  • Enhanced functionality and processing speed in magnetic logic devices


Original Abstract Submitted

A method of manufacturing a double magnetic tunnel junction device includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a metallic ring layer on the sides of the spin conducting layer; and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than the width of the first magnetic tunnel junction stack. A double magnetic tunnel junction device includes a first magnetic tunnel junction stack, a spin conducting layer on the first magnetic tunnel junction stack, a metallic ring layer on the sides of the spin conducting layer; and a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than the width of the first magnetic tunnel junction stack.

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