17530446. VERTICAL SILICON AND III-V PHOTOVOLTAICS INTEGRATION WITH SILICON ELECTRONICS simplified abstract (International Business Machines Corporation)

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VERTICAL SILICON AND III-V PHOTOVOLTAICS INTEGRATION WITH SILICON ELECTRONICS

Organization Name

International Business Machines Corporation

Inventor(s)

Devendra K. Sadana of Pleasantville NY (US)

Ning Li of White Plains NY (US)

VERTICAL SILICON AND III-V PHOTOVOLTAICS INTEGRATION WITH SILICON ELECTRONICS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17530446 titled 'VERTICAL SILICON AND III-V PHOTOVOLTAICS INTEGRATION WITH SILICON ELECTRONICS

Simplified Explanation

The abstract describes a photovoltaic structure that includes a substrate and off-axis, doped silicon regions at a non-zero angle. Photovoltaic devices of different chemistries can be located outward of the off-axis regions and the substrate.

  • The photovoltaic structure includes a substrate and off-axis, doped silicon regions.
  • The off-axis silicon regions have a lattice orientation at a non-zero angle.
  • Photovoltaic devices of a first chemistry are located outward of the off-axis silicon regions.
  • Optionally, photovoltaic devices of a second chemistry, different from the first chemistry, can be located outward of the substrate and away from the off-axis silicon regions.

Potential Applications

  • Solar power generation
  • Renewable energy systems
  • Integration into building materials
  • Portable electronic devices

Problems Solved

  • Improved efficiency of photovoltaic structures
  • Enhanced performance in capturing solar energy
  • Increased flexibility in design and integration

Benefits

  • Higher energy conversion efficiency
  • Versatile design options
  • Potential for improved durability and reliability
  • Possibility of integrating different types of photovoltaic devices


Original Abstract Submitted

A photovoltaic structure includes a substrate; and a plurality of off-axis, doped silicon regions outward of the substrate. The plurality of off-axis, doped silicon regions have an off-axis lattice orientation at a predetermined non-zero angle. A plurality of photovoltaic devices of a first chemistry are located outward of the plurality of off-axis, doped silicon regions. Optionally, a plurality of photovoltaic devices of a second chemistry, different than the first chemistry, are located outward of the substrate and are spaced away from the plurality of off-axis, doped silicon regions.

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