17529115. NANOSHEET REPLACEMENT METAL GATE PATTERNING SCHEME simplified abstract (International Business Machines Corporation)
NANOSHEET REPLACEMENT METAL GATE PATTERNING SCHEME
Organization Name
International Business Machines Corporation
Inventor(s)
RUQIANG Bao of Niskayuna NY (US)
Junli Wang of Slingerlands NY (US)
Dechao Guo of Niskayuna NY (US)
NANOSHEET REPLACEMENT METAL GATE PATTERNING SCHEME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17529115 titled 'NANOSHEET REPLACEMENT METAL GATE PATTERNING SCHEME
Simplified Explanation
The abstract describes a device that includes a base layer structure with two regions, a first and a second region. It also includes a first bottom gate material in the first and second regions, and a second bottom gate material in the first and second regions. The device further comprises first nanosheet gate-all-round device structures on the first bottom gate material, and second nanosheet gate-all-round device structures on the second bottom gate material. The first bottom gate material is located over the second nanosheet gate-all-around device structures in the second-type doped regions, and the second bottom gate material extends from the second nanosheet gate-all-around device structures towards the first gate-all-round device structures in the boundary regions between the first and second-type doped regions.
- The device includes a base layer structure with two regions, a first and a second region.
- It has a first bottom gate material in the first and second regions.
- It also has a second bottom gate material in the first and second regions.
- The device includes first nanosheet gate-all-round device structures on the first bottom gate material.
- It has second nanosheet gate-all-round device structures on the second bottom gate material.
- The first bottom gate material is located over the second nanosheet gate-all-around device structures in the second-type doped regions.
- The second bottom gate material extends from the second nanosheet gate-all-around device structures towards the first gate-all-round device structures in the boundary regions between the first and second-type doped regions.
Potential Applications
- This device structure could be used in various electronic devices such as transistors or integrated circuits.
- It may find applications in the field of nanoelectronics and semiconductor technology.
Problems Solved
- The device structure provides a more efficient and compact design for electronic devices.
- It allows for better control and manipulation of electrical signals in the device.
Benefits
- The device structure offers improved performance and functionality compared to traditional designs.
- It enables higher integration density and lower power consumption in electronic devices.
- The design allows for better scalability and manufacturability of the devices.
Original Abstract Submitted
A device includes a base layer structure including a first region and a second region; a first bottom gate material in a plurality of first-type doped regions in the first and second regions; a second bottom gate material in a second-type doped regions in the first and second regions; first nanosheet gate-all-round device structures on the first bottom gate material; and second nanosheet gate-all-round device structures on the second bottom gate material, wherein the first bottom gate material is located over the second nanosheet gate-all-around device structures in the second-type doped regions of the first and second regions, wherein the second bottom gate material extends, in boundary regions between the first-type and second-type doped regions, on the base layer structure from the second nanosheet gate-all-around devices structures toward the first gate-all-round device structures.
